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SD103AW 数据表(PDF) 1 Page - General Semiconductor

部件名 SD103AW
功能描述  Schottky Diodes
PDF  3 Pages
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制造商  GE [General Semiconductor]
网页  http://www.vishay.com
标志 GE - General Semiconductor

SD103AW 数据表(HTML) 1 Page - General Semiconductor

  SD103AW Datasheet HTML 1Page - General Semiconductor SD103AW Datasheet HTML 2Page - General Semiconductor SD103AW Datasheet HTML 3Page - General Semiconductor  
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FEATURES
Schottky Diodes
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Case: SOD-123 Plastic Case
Weight: approx. 0.01 g
Dimensions in inches and (millimeters)
SOD-123
.022 (0.55)
.067 (1.70)
min. .010 (0.25)
Cathode Mark
Top View
.055 (1.40)
4/98
SD103AW THRU SD103CW
Symbol
Value
Unit
Peak Inverse Voltage
SD103AW
SD103BW
SD103CW
VRRM
VRRM
VRRM
40
30
20
V
V
V
Power Dissipation (Infinite Heat Sink)
Ptot
400 2)
mW
Single Cycle Surge
10
µs Square Wave
IFSM
2A
Junction Temperature
Tj
125 2)
°C
Storage Temperature Range
TS
–55 to +150 2)
°C
2) Valid provided that electrodes are kept at ambient temperature
For general purpose applications.
The SD103 series is a metal-on-silicon
Schottky barrier device which is pro-
tected by a PN junction guard ring. The
low forward voltage drop and fast switching make
it ideal for protection of MOS devices, steering,
biasing, and coupling diodes for fast switching
and low logic level applications. Other
applications are click suppression, efficient
full wave bridges in telephone subsets, and blocking
diodes in rechargeable low voltage battery systems.
This diode is also available in MiniMELF case with the
type designation LL103A … LL103C and DO-35 case
with the type designations SD103A .. SD103C.


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