SD106WS datasheet(1/1 Pages) GE

部件名	SD106WS

功能描述	SCHOTTKY DIODES

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制造商	GE [General Semiconductor]

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SD106WS

SCHOTTKY DIODES

FEATURES

¨ Low turn-on voltage

¨ Fast switching

¨ Microminiature plastic package

¨ These devices are protected by a PN

junction guard ring against excessive voltage,

such as electrostatic discharge.

¨ Ideal for protection of MOS devices, steering, biasing,

and coupling diodes for fast switching and low logic level

applications.

MECHANICAL DATA

Case: SOD-323 Plastic Package

Weight: approx. 0.004g

Marking Code: S2

MAXIMUM RATINGS

Ratings at 25¡C ambient temperature unless otherwise specified

SYMBOL

VALUE

UNIT

Continuous Reverse Voltage

VR

30

Volts

Forward Current

IF

200

mA

Forward Surge Current, tp = 10ms

IFSM

1.0

A

Power Dissipation TC= 25¡C

Ptot

250 (NOTE 1)

mW

Thermal Resistance Junction to Ambient Air

RQJA

500

¡C/W

Junction Temperature

Tj

150

¡C

Storage Temperature Range

TS

-65 to + 150

¡C

NOTES:

(1) Valid provided that electrodes are kept at ambient temperature

min. .010 (0.25)

.012 (0.3)

.059 (1.5)

Cathode Mark

Top View

.043 (1.1)

SOD-323

2/8/99

Dimensions in inches and (millimeters)

ELECTRICAL CHARACTERISTICS

Ratings at 25¡C ambient temperature unless otherwise specified

SYMBOL

MIN.

TYP.

MAX.

UNIT

Reverse Breakdown Voltage at IR = 100

mABVR

30

Ð

Volts

Leakage Current at VR = 30 V

IR

Ð

5.0

mA

Forward Voltage

at IF = 2.0 mA

VF

Ð

260

Ð

mV

at IF = 15 mA

VF

Ð

320

Ð

mV

at IF = 100 mA

VF

Ð

420

Ð

mV

at IF = 200mA

VF

Ð

490

550

mV

Junction Capacitance at VR = 10V, f = 1.0MHZ

Ctot

Ð

Max 15

pF

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