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STX13004-AP 数据表(PDF) 3 Page - STMicroelectronics

部件名 STX13004-AP
功能描述  High voltage fast-switching NPN power transistor
PDF  11 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STX13004-AP 数据表(HTML) 3 Page - STMicroelectronics

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STX13004
Electrical characteristics
Doc ID 15543 Rev 3
3/11
2
Electrical characteristics
Tcase = 25 °C; unless otherwise specified.
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ICES
Collector cut-off current
(VBE = 0)
VCE = 700 V
10
µA
ICEO
Collector cut-off current
(IB = 0)
VCE = 400 V
1
mA
V(BR)EBO
Emitter-base breakdown
voltage (IC = 0)
IE = 10 mA
9
18
V
VCEO(sus)
(1)
1.
Pulse test: pulse duration
≤ 300 µs, duty cycle ≤ 2 %.
Collector-emitter sustaining
voltage (IB = 0)
IC = 10 mA
400
V
VCE(sat)
(1)
Collector-emitter saturation
voltage
IC = 1 A
IB = 200 mA
IC = 2 A
IB = 500 mA
0.5
1
V
V
VBE(sat)
(1)
Base-emitter saturation
voltage
IC = 1 A
IB = 200 mA
IC = 2 A
IB = 500 mA
1.2
1.6
V
V
hFE
DC current gain
IC = 0.5 mA
VCE = 2 V
IC = 400 mA
VCE = 2 V
IC = 1 A
VCE = 5 V
IC = 2 A
VCE = 5 V
15
26
10
6
35
30
16
ts
tf
Resistive load
Storage time
Fall time
IC = 2 A __
_
tp = 30 µs
IB(on) = -IB(off) = 400 mA
VCC = 125 V
VBB(off) = -5 V
(see Figure 12)
1.1
300
µs
ns
ts
tf
Inductive load
Storage time
Fall time
IC = 1 A
Vclamp = 300 V
IB(on) = 250 mA VBB(off) = -5 V
Csnubber = 1 nF
RBB(off) = 0
(see Figure 13)
2.4
200
µs
ns
Obsolete
Product(s)
- Obsolete
Product(s)



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