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IXTY18P10T 数据表(PDF) 5 Page - IXYS Corporation

部件名 IXTY18P10T
功能描述  TrenchP Power MOSFETs
PDF  6 Pages
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制造商  IXYS [IXYS Corporation]
网页  http://www.ixys.com
标志 IXYS - IXYS Corporation

IXTY18P10T 数据表(HTML) 5 Page - IXYS Corporation

  IXTY18P10T Datasheet HTML 1Page - IXYS Corporation IXTY18P10T Datasheet HTML 2Page - IXYS Corporation IXTY18P10T Datasheet HTML 3Page - IXYS Corporation IXTY18P10T Datasheet HTML 4Page - IXYS Corporation IXTY18P10T Datasheet HTML 5Page - IXYS Corporation IXTY18P10T Datasheet HTML 6Page - IXYS Corporation  
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© 2013 IXYS CORPORATION, All Rights Reserved
IXTY18P10T IXTA18P10T
IXTP18P10T
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
21
22
23
24
25
26
27
28
29
30
-18
-17
-16
-15
-14
-13
-12
-11
-10
-9
ID - Amperes
RG = 10Ω , VGS = -10V
VDS = - 50V
TJ = 25ºC
TJ = 125ºC
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
14
16
18
20
22
24
26
28
30
10
12
14
16
18
20
22
24
26
28
30
RG - Ohms
0
10
20
30
40
50
60
70
80
t r
td(on) - - - -
TJ = 125ºC, VGS = -10V
VDS = - 50V
I D = -18A, - 9A
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
19
20
21
22
23
24
25
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
30
34
38
42
46
50
54
t f
td(off) - - - -
RG = 10Ω, VGS = -10V
VDS = - 50V
I D = -18A, - 9A
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
30
33
36
39
42
45
48
51
54
-18
-17
-16
-15
-14
-13
-12
-11
-10
-9
ID - Amperes
19
20
21
22
23
24
25
26
27
t f
td(off) - - - -
RG = 10Ω, VGS = -10V
VDS = - 50V
TJ = 125ºC
TJ = 25ºC
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
20
21
22
23
24
25
26
27
28
29
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
RG = 10Ω , VGS = -10V
VDS = - 50V
I D = - 9A
I D = -18A
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
15
20
25
30
35
40
45
50
55
60
65
10
12
14
16
18
20
22
24
26
28
30
32
34
RG - Ohms
10
20
30
40
50
60
70
80
90
100
110
t f
td(off) - - - -
TJ = 125ºC, VGS = -10V
VDS = - 50V
I D = - 9A, -18A



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