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UG30APT 数据表(PDF) 1 Page - General Semiconductor

部件名 UG30APT
功能描述  ULTRAFAST EFFICIENT PLASTIC RECTIFIER
PDF  2 Pages
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制造商  GE [General Semiconductor]
网页  http://www.vishay.com
标志 GE - General Semiconductor

UG30APT 数据表(HTML) 1 Page - General Semiconductor

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UG30APT THRU UG30DPT
ULTRAFAST EFFICIENT PLASTIC RECTIFIER
Reverse Voltage - 50 to 200 Volts
Forward Current - 30.0 Amperes
FEATURES
♦ Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
♦ Ideally suited for use in very high frequency switching
power supplies, inverters and as a free wheeling diodes
♦ Ultrafast, 15 nanosecond typical recovery time
♦ Low leakage current
♦ Glass passivated chip junctions
♦ Soft recovery characteristics
♦ Excellent high temperature switching
♦ High temperature soldering guaranteed:
250°C, 0.16” (4.06mm) from case for 10 seconds
MECHANICAL DATA
Case: JEDEC TO-247AD molded plastic body over
passivated chips
Terminals: Plated leads solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Mounting Position: Any
Weight: 2.2 ounces, 6.3 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
UG30APT
UG30BPT
UG30CPT
UG30DPT
UNITS
Maximum repetitive peak reverse voltage
VRRM
50
100
150
200
Volts
Maximum RMS voltage
VRMS
35
70
105
140
Volts
Maximum DC blocking voltage
VDC
50
100
150
200
Volts
Maximum average forward rectified current at TC=120°C
I(AV)
30.0
Amps
Peak forward surge current
8.3 ms single half sine-wave superimposed
IFSM
300.0
Amps
on rated load (JEDEC Method) at TC=120°C
Maximum instantaneous forward voltage
per leg at 15A
1.0
30A
VF
1.15
Volts
10A TJ=100°C
0.85
Maximum DC reverse current at
TA =25°C
5.0
rated DC blocking voltage per leg
TA =100°C
IR
800.0
µA
Maximum reverse recovery time (NOTE 1)
trr
20.0
ns
Maximum reverse recovery time
TJ= 25°C
35.0
(NOTE 2)
TJ=100°C
trr
50.0
ns
Maximum recovered stored charge
TJ=25°C
22.0
(NOTE 2)
TJ=100°C
Qrr
50.0
nC
Typical junction capacitance (NOTE 3)
CJ
70.0
pF
Typical thermal resistance (NOTE 4)
R
ΘJC
2.0
°C/W
Operating and storage temperature range
TJ, TSTG
-65 to +150
°C
NOTES:
(1) Reverse recovery test conditions: IF=0.5A, IR =1.0A, Irr=0.25A
(2) trr and Qrr measured at: IF=15A VR=30V, di/dt=50 A/
µs, IRR=10% IRM for measurement of trr
(3) Measured at 1.0 MHZ and applied reverse voltage of 4.0 Volts
(4) Thermal resistance from junction to case per leg mounted on heatsink
PIN 1
PIN 3
CASE
0.245 (6.2)
0.225 (5.7)
0.645 (16.4)
0.625 (15.9)
0.323 (8.2)
0.313 (7.9)
0.142 (3.6)
0.138 (3.5)
0.170
(4.3)
0.086 (2.18)
0.076 (1.93)
0.160 (4.1)
0.140 (3.5)
0.225 (5.7)
0.205 (5.2)
0.127 (3.22)
0.117 (2.97)
0.048 (1.22)
0.044 (1.12)
0.795 (20.2)
0.775 (19.6)
0.840 (21.3)
0.820 (20.8)
1
2
3
0.078 REF
(1.98)
0.203 (5.16)
0.193 (4.90)
10
o TYP.
BOTH SIDES
30o
10
o
1
o
REF.
0.118 (3.0)
0.108 (2.7)
0.030 (0.76)
0.020 (0.51)
BOTH SIDES
PIN 2
TO-247AD
Dimensions in inches and (millimeters)


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