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GD421SD 数据表(PDF) 1 Page - E-Tech Electronics LTD |
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GD421SD 数据表(HTML) 1 Page - E-Tech Electronics LTD |
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1 / 2 page ![]() CORPORATION 1/2 ISSUED DATE :2005/05/20 REVISED DATE : G G D D 442211S S D D S S U U R R F F A A C C E E M M O O U U N N T T ,, S S C C H H O O T T T T K K Y Y B B A A R R R R II E E R R D D II O O D D E E V V O O L L T T A A G G E E 44 00 V V ,, C C U U R R R R E E N N T T 00 .. 11 A A Description The GD421SD is designed for low power rectification. Package Dimensions Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 0.85 1.05 A1 0 0.10 L 0.20 0.40 A2 0.80 1.00 b 0.25 0.40 D 1.15 1.45 c 0.10 0.18 E 1.60 1.80 HE 2.30 2.70 Q1 0.15 BSC. Absolute Maximum Ratings at Ta = 25 :::: Parameter Symbol Ratings Unit Junction Temperature Tj +125 Storage Temperature Tstg -40 ~ +125 Maximum Recurrent Peak Reverse Voltage VRRM 40 V Maximum RMS Voltage VRPS 28 V Maximum DC Blocking Voltage VDC 40 V Peak Forward Surge Current at 8.3mSec single half sine-wave IFSM 1.0 A Typical Junction Capacitance between Terminal CJ 6.0 pF Maximum Average Forward Rectified Current Io 0.1 A Total Power Dissipation PD 225 mW Characteristics at Ta = 25 :::: Parameter Symbol Min. Typ. Max. Unit Test Conditions Reverse Breakdown Voltage V(BR)R 40 - - V IR=50 A VF(1) - - 340 mV IF=10mA Forward Voltage VF(2) - - 550 mV IF=100mA Reverse Leakage Current IR - - 30 A VR=10V |
类似零件编号 - GD421SD |
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类似说明 - GD421SD |
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