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2010.09 - Rev.C

Data Sheet

EMX5 / UMX5N / IMX5

Electrical characteristics (Ta=25

C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Transition frequency

20

11

3

−

−

56

−

−

−

−

−

−

−

−

−

−

−

−

0.5

0.5

120

0.5

1.55

V

V

V

μA

μA

−

V

GHz

∗

Cob

1.4

3.2

0.9

−

pF

=10μA

=1mA

=10μA

=10V

=2V

=10V/−10mA, f=500MHz

=10mA/5mA

=10V/5mA

∗Transition frequency of the device.

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

Output capacitance

Electrical characteristics curves

Fig.1 DC current gain vs. collector current

(mA)

0.2

0.1

0.5

1

2

510

20

50

20

10

50

100

200

500

Ta=25

°C

=10V

Fig.2 Collector-emitter saturation voltage

vs. collector current

(mA)

0.2

0.1

0.5

1

2

5

10

20

50

20

10

50

100

200

500

Ta=25

°C

=10

=2

Fig.3 Gain bandwidth product vs. emitter current

(mA)

−0.2

−0.1

−0.5

−1 −2

−5

−10 −20

−50

0.2

0.1

0.5

1.0

2.0

5.0

Ta=25

°C

=10V

Fig.4 Capacitance vs. reverse bias voltage

(V)

0.2

0.1

0.5

1

2

5

10

20

50

0.2

0.1

0.5

1.0

2.0

5.0

Ta=25

°C

f

=1MHz

=0A

Cob

Cre

Fig.5 Collector to base time constant

vs. collector current characteristics

(mA)

0.2

0.1

0.5

1

2

5

10

20

50

2.0

1.0

5.0

10

20

50

Ta=25

°C

=10V

f=31.8MHz

Fig.6 Noise factor vs. collector current characteristics

(mA)

0.2

0.1

0.5

1

2

5

10

20

50

10

0

20

Ta=25

°C

=6V

f

=500MHz