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2SC2463 数据表(PDF) 2 Page - Hitachi Semiconductor

部件名 2SC2463
功能描述  Silicon NPN Epitaxial
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  HITACHI [Hitachi Semiconductor]
网页  http://www.renesas.com/eng
标志 HITACHI - Hitachi Semiconductor

2SC2463 数据表(HTML) 2 Page - Hitachi Semiconductor

  2SC2463 Datasheet HTML 1Page - Hitachi Semiconductor 2SC2463 Datasheet HTML 2Page - Hitachi Semiconductor 2SC2463 Datasheet HTML 3Page - Hitachi Semiconductor 2SC2463 Datasheet HTML 4Page - Hitachi Semiconductor 2SC2463 Datasheet HTML 5Page - Hitachi Semiconductor  
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2SC2463
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
55
V
Collector to emitter voltage
V
CEO
50
V
Emitter to base voltage
V
EBO
5V
Collector current
I
C
100
mA
Collector power dissipation
P
C
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
55
—
—
V
I
C = 10 µA, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
50
—
—
V
I
C = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
5—
—
V
I
E = 10 µA, IC = 0
Collector cutoff current
I
CBO
—
—
0.5
µAV
CB = 30 V, IE = 0
Emitter cutoff current
I
EBO
—
—
0.5
µAV
EB = 2 V, IC = 0
DC current transfer ratio
h
FE*
1
250
—
1200
V
CE = 12 V, IC = 2 mA
Collector to emitter saturation
voltage
V
CE(sat)
—
—
0.5
V
I
C = 10 mA, IB = 1 mA
Base to emitter voltage
V
BE
—
—
0.75
V
V
CE = 12 V, IC = 2 mA
Note:
1. The 2SC2463 is grouped by h
FE as follows.
Grade
D
E
F
Mark
DD
DE
DF
h
FE
250 to 500
400 to 800
600 to 1200
See characteristic curves of 2SC1345.



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