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2SC2471 数据表(PDF) 2 Page - Hitachi Semiconductor

部件名 2SC2471
功能描述  Silicon NPN Epitaxial
PDF  7 Pages
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制造商  HITACHI [Hitachi Semiconductor]
网页  http://www.renesas.com/eng
标志 HITACHI - Hitachi Semiconductor

2SC2471 数据表(HTML) 2 Page - Hitachi Semiconductor

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2SC2471
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
30
V
Collector to emitter voltage
V
CEO
30
V
Emitter to base voltage
V
EBO
3V
Collector current
I
C
50
mA
Collector power dissipation
P
C
310
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
30
—
—
V
I
C = 10 µA, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
30
—
—
V
I
C = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
3—
—
V
I
E = 10 µA, IC = 0
Collector cutoff current
I
CBO
—
—
100
nA
V
CB = 24 V, IE = 0
Emitter cutoff current
I
EBO
—
—
100
nA
V
EB = 2 V, IC = 0
Collector to emitter saturation
voltage
V
CE(sat)
—
—
300
mV
I
C = 10 mA, IB = 5 mA
Base to emitter voltage
V
BE
—
—
0.95
V
V
CE = 10 V, IC = 5 mA
DC current transfer ratio
h
FE
20
—
—
V
CE = 10 V, IC = 5 mA
Gain bandwidth product
f
T
1000
2000
—
MHz
V
CE = 10 V, IC = 5 mA
Collector output capacitance
Cob
—
0.9
1.5
pF
V
CB = 10 V, IE = 0, f = 1 MHz
Base time constant
r
bb’
•
C
C
—1220
ps
V
CB = 10 V, IC = 5 mA,
f = 31.8 MHz



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