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2SC2613 数据表(PDF) 2 Page - Hitachi Semiconductor |
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2SC2613 数据表(HTML) 2 Page - Hitachi Semiconductor |
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2 / 7 page ![]() 2SC2613 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to emitter sustain voltage V CEO(sus) 400 — — V I C = 0.2 A, RBE = ∞, L = 100 mH V CEX(sus) 400 — — V I C = 5 A, IB1 = –IB2 = 1 A V BE = –5 V, L = 180 µH, Clamped Emitter to base breakdown voltage V (BR)EBO 7— — V I E = 10 mA, IC = 0 Collector cutoff current I CBO — — 100 µAV CB = 400 V, IE = 0 I CEO — — 100 µAV CE = 350 V, RBE = ∞ DC current transfer ratio h FE1 15 — — V CE = 5 V, IC = 2.5 A* 1 h FE2 7— — V CE = 5 V, IC = 5 A* 1 Collector to emitter saturation voltage V CE(sat) — — 1.0 V I C = 2.5 A, IB = 0.5 A* 1 Base to emitter saturation voltage V BE(sat) — — 1.5 V I C = 2.5 A, IB = 0.5 A* 1 Turn on time t on — — 1.0 µsI C = 5 A, IB1 = –IB2 = 1 A, Storage time t stg — 1.2 2.5 µsV CC ≅ 150 V Fall time t f — — 1.0 µs Note: 1. Pulse test. 0 Case Temperature TC (°C) Maximum Collector Dissipation Curve 50 100 150 20 60 40 0.01 0.1 1.0 100 10 Collector to emitter Voltage VCE (V) 1 3 10 30 100 300 1,000 Area of Safe Operation IC (max) (Continuous) iC (peak) Ta = 25 °C, 1 Shot |
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