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2SC4196 数据表(PDF) 2 Page - Hitachi Semiconductor

部件名 2SC4196
功能描述  Silicon NPN Epitaxial
PDF  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  HITACHI [Hitachi Semiconductor]
网页  http://www.renesas.com/eng
标志 HITACHI - Hitachi Semiconductor

2SC4196 数据表(HTML) 2 Page - Hitachi Semiconductor

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2SC4196
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
25
V
Collector to emitter voltage
V
CEO
15
V
Emitter to base voltage
V
EBO
3V
Collector current
I
C
50
mA
Collector power dissipation
P
C
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
25
——V
I
C = 10 µA, IE = 0
Collector cutoff current
I
CBO
—
—
0.3
µAV
CB = 15 V, IE = 0
I
CEO
——
10
µAV
CE = 15 V, RBE = ∞
Emitter cutoff current
I
EBO
—
—
1.0
µAV
EB = 3 V, IC = 0
Collector to emitter saturation
voltage
V
CE(sat)
—
—
0.3
V
I
C = 20 mA, IB = 4 mA
DC current transfer ratio
h
FE
50
—
180
V
CE = 5 V, IC = 5 mA
Collector output capacitance
Cob
—
0.7
1.0
pF
V
CB = 10 V, IE = 0, f = 1MHz
Gain bandwidth product
f
T
1.8
2.4
—
GHz
V
CE = 5 V, IC = 20 mA
Oscillating output voltage
V
OSC
—
200
—
mV
V
CC = 5 V, IC = 5 mA,
f = 930 MHz
Note:
Marking is “QI–”.



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