PACUSBVB

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3

SPECIFICATIONS (Cont’d)

Table 4. ELECTRICAL OPERATING CHARACTERISTICS

Symbol

Parameter

Conditions

Min

Typ

Max

Units

R1

Resistance of R1 Resistor

26.4

33

39.6

W

R2

Resistance of R2 Resistor

15

kW

TCR

Temperature Coefficient of Resistance

+1300

ppm/C

C1

Capacitance of C1 Capacitor

0 V DC, 30 mV AC, 1 MHz, 25C

37.6

47.0

56.4

pF

2.5 V DC, 30 mV AC, 1 MHz, 25C

25.6

32.0

38.4

pF

Matching Tolerance of C1 Capacitors

1 MHz, 25C

2

%

Diode Leakage Current to GND

Measured at 3.3 V DC, 25C

1

100

nA

Diode Reverse Bias Voltage

5.5

V

Signal Voltage:

Positive Clamp

Negative Clamp

5.6

−0.4

6.8

−0.8

9.0

−1.5

V

In−system ESD Withstand Voltage

MIL−STD−883D, Method 3015 (HBM)

IEC 61000−4−2 Contact Discharge

Pins 1, 3 (Notes 1 and 2)

Pins 4, 5 (Note 1)

Pins 4, 5 (Note 1)

4

20

15

kV

Clamping Voltage under ESD Discharge

MIL−STD−883D, Method 3015 +8 kV

(Note 3)

12

V

MIL−STD−883D, Method 3015 −8kV

(Note 3)

−7

V

1. ESD voltage applied to pins with respect to GND, one at a time; unused pins are left open.

2. Pins 1 and 3 are not connected to the USB port connector, and therefore are not exposed to external ESD hazards. Thus, they do not require

the high ESD protection levels provided for pins 4, 5, and 6.

3. ESD Clamping Voltage is measured at the opposite end of R1 from the pin to which the ESD discharge is applied (e.g., if ESD is applied

to pin 6, then the clamping voltage is measured at pin 1).