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2SC4308 数据表(PDF) 2 Page - Hitachi Semiconductor

部件名 2SC4308
功能描述  Silicon NPN Epitaxial Planar
PDF  6 Pages
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制造商  HITACHI [Hitachi Semiconductor]
网页  http://www.renesas.com/eng
标志 HITACHI - Hitachi Semiconductor

2SC4308 数据表(HTML) 2 Page - Hitachi Semiconductor

  2SC4308 Datasheet HTML 1Page - Hitachi Semiconductor 2SC4308 Datasheet HTML 2Page - Hitachi Semiconductor 2SC4308 Datasheet HTML 3Page - Hitachi Semiconductor 2SC4308 Datasheet HTML 4Page - Hitachi Semiconductor 2SC4308 Datasheet HTML 5Page - Hitachi Semiconductor 2SC4308 Datasheet HTML 6Page - Hitachi Semiconductor  
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2SC4308
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
30
V
Collector to emitter voltage
V
CEO
20
V
Emitter to base voltage
V
EBO
3V
Collector current
I
C
300
mA
Collector peak current
i
C (peak)
500
mA
Collector power dissipation
P
C
600
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
30
——V
I
C = 100 µA, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
20
——V
I
C = 1 mA, RBE = ∞
Collector cutoff current
I
CBO
——
1
µAV
CB = 25 V, IE = 0
Emitter cutoff current
I
EBO
——
10
µAV
EB = 3 V, IE = 0
DC current transfer ratio
h
FE
50
—
200
V
CE = 5 V, IC = 50 mA
Gain bandwidth product
f
T
1.5
2.5
—
GHz
V
CE = 5 V, IC = 50 mA
Collector output capacitance
Cob
—
4.0
—
pF
V
CB = 10 V, IE = 0, f = 1 MHz



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