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STP46NF30 数据表(PDF) 3 Page - STMicroelectronics

部件名 STP46NF30
功能描述  N-channel 300 V, 0.063typ, 42 A, STripFET??II Power MOSFET in D2PAK, TO-220 and TO-247 packages
PDF  19 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP46NF30 数据表(HTML) 3 Page - STMicroelectronics

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STB46NF30, STP46NF30, STW46NF30
Electrical ratings
Doc ID 018493 Rev 1
3/19
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
300
V
VGS
Gate-source voltage
± 20
V
ID
Drain current (continuous) at TC = 25 °C
42
A
ID
Drain current (continuous) at TC = 100 °C
27
A
IDM
(1)
1.
Pulse width limited by safe operating area.
Drain current (pulsed)
168
A
Ptot
Total dissipation at TC = 25 °C
300
W
Derating factor
2
W/°C
dv/dt (2)
2.
ISD ≤ 34 A, di/dt ≤200 A/µs, VDD ≤ 80% V(BR)DSS.
Peak diode recovery voltage slope
10
V/ns
Tstg
Storage temperature
-55 to 175
°C
Tj
Max. operating junction temperature
175
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
D2PAK TO-220 TO-247
Rthj-case
Thermal resistance junction-case max
0.5
°C/W
Rthj-amb
Thermal resistance junction-ambient max
30
62.5
50
°C/W
Rthj-pcb
Thermal resistance junction-pcb max
30
°C/W
TJ
Maximum lead temperature for soldering
purpose
300
°C
Table 4.
Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not repetitive (1)
1.
Pulse width limited by Tjmax
26
A
EAS
(2)
2.
Starting Tj = 25 °C, ID = IAR, VDD = 50 V
Single pulse avalanche energy
290
mJ



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