Data Sheet 291200 issue 2 April 12

Process information and data (“Information”) in this document is an outline only, for general information purposes ; it does not constitute a representation or

warranty as to capability , performance or suitability of the Process for any given application. User must satisfy himself that the Process is suitable for his

requirements.

While Information herein is believed correct and accurate , it is subject to change without notice and Plessey accepts no liability arising from the use or application of

such Information.

All use of, and product manufactured and supplied using the Process , will be subject to Plessey’s standard trading terms, which are available on request .

Plessey Semiconductors Ltd. Tamerton Road, Roborough, Plymouth, United Kingdom, PL6 7BQ

Tel: +44 1752 693000

Fax: +44 1752 693200

HSB

SOI Complementary Bipolar Process

Data Sheet 291200 issue 2 April 12

npn cross section

oxide

epitaxy (n-)

BN

Substrate

DC

Base

P+

Emitter

Collector

P+ Base

B U R I E D

O X I D E

vpnp cross section

oxide

BP

Collector

N+

N+

Base

Emitter

Base

B U R I E D

O X I D E

P-well

PDC

npn parameters (0.6 x 4.0um emitter)

parameter

Condition

Value

Units

fT

Ic=0.14mA Vce=5V

5

GHz

HFE

Ic=10µA Vce=5V

166

VAF

215

V

BVCEO

Ic=10µA

>26

V

BVCBO

Ic=1µA

>40

V

CJE

Vbe=0

12

fF

CJC

Vbc=0

5

fF

CJS

Vcs=0

49

fF

Vertical pnp parameters (0.6 X 4.0µm emitter)

parameter

Condition

Value

Units

fT

Ic=0.11mAVce=5V

4

GHz

HFE

Ic=10µA Vce=5V

52

VAF

95

V

BVCEO

Ic=10µA

>30

V

BVCBO

Ic=1µA

>40

V

CJE

Vbe=0

10

fF

CJC

Vbc=0

5

fF

CJS

Vcs=0

42

fF

Polysilicon Resistor Values

parameter

Value

Units

LoP

155 ± 20

Ω

LoN

110 ± 20

Ω

HiP

1.4 ± 0.2

kΩ

Design Rules

Feature

Min µm

Spacing µm

Emitter

0.6 X 1.6

LoP, LoN resistor

1.2

0.8

HiP resistor

1.0

0.8

Contact

1.0 X 1.6

1.4

1st Layer metal

1.4

1.0

2

1.4

1.0

Applications

•

High Speed Video Amplifiers

•

ADSL Drivers

•

High Speed Amplifiers

•

Laser Diode Drivers for DVD

•

Cable Modems

Key Process Feature

•

Low Substrate Capacitance

•

Polysilicon resistors -110/155/1400 Ohms/sq

•

•

MIS capacitors – 0.6 fF/µm²

•

Two level metal

HSB is a 26V, high speed, double polysilicon, trench isolated,

complementary SOI bipolar process providing vertical integrated PNP,

polysilicon resistors, MIS capacitors with PtSi Schottky diodes.