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2SD1421 数据表(PDF) 2 Page - Hitachi Semiconductor |
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2SD1421 数据表(HTML) 2 Page - Hitachi Semiconductor |
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2 / 6 page ![]() 2SD1421 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage V CBO 180 V Collector to emitter voltage V CEO 160 V Emitter to base voltage V EBO 5V Collector current I C 1.5 A Collector peak current i C(peak)* 1 3A Collector power dissipation P C* 2 1W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20% 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V (BR)CBO 180 — — V I C = 1 mA, IE = 0 Collector to emitter breakdown voltage V (BR)CEO 160 — — V I C = 10 mA, RBE = ∞ Emitter to base breakdown voltage V (BR)EBO 5— — V I E = 1 mA, IC = 0 Collector cutoff current I CBO —— 10 µAV CB = 160 V, IE = 0 DC current transfer ratio h FE1* 1 60 — 200 V CE = 5 V, IC = 0.15 A h FE2 30 — — V CE = 5 V, IC = 0.5 A Collector to emitter saturation voltage V CE(sat) — — 1.0 V I C = 0.5 A, IB = 50 mA, Pulse Base to emitter voltage V BE — — 0.9 V V CE = 5 V, IC = 0.15 A, Pulse Note: 1. The 2SD1421 is grouped by h FE1 as follows. Mark ED EE h FE1 60 to 120 100 to 200 |
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