MML20211HT1

1

RF Device Data

Freescale Semiconductor

Enhancement Mode pHEMT

Technology (E--pHEMT)

Low Noise Amplifier

The MML20211H is a single--stage low noise amplifier (LNA) with active bias

and high isolation for use in cellular infrastructure applications. It is designed for

a range of low noise, high linearity applications such as pico cell, femto cell,

tower mounted amplifiers (TMA) and receiver front end circuits. It operates from

a single voltage supply and is suitable for applications with frequencies from

1400 to 2800 MHz such as TD--SCDMA, W--CDMA, UMTS, PCS, LTE and BWA.

Features

 Ultra Low Noise Figure: 0.65 dB @ 2140 MHz

 Frequency: 1400--2800 MHz

 High Reverse Isolation: --35 dB @ 2140 MHz

 P1dB: 21.3 dBm @ 2140 MHz

 Small--Signal Gain: 18.6 dB @ 2140 MHz (adjustable externally)

 Third Order Output Intercept Point: 33 dBm @ 2140 MHz

 Active Bias Control (adjustable externally)

 Single 5 V Supply

 Supply Current: 60 mA

 50 Ohm Operation (some external matching required)

 Cost--effective 8--pin, 2 mm DFN Surface Mount Plastic Package

 In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.

Characteristic

Symbol

1400

MHz

1800

MHz

2140

MHz

2700

MHz

Unit

NF

0.65

0.65

0.65

0.85

dB

Input Return

Loss (S11)

IRL

--19.5

--16

--16.7 --17.3

dB

Output Return

Loss (S22)

ORL

--24.9

--28

--26.6

--20

dB

Small--Signal

Gain (S21)

21.3

19.7

18.6

18.1

dB

Power Output

@ 1dB

Compression

P1dB

21.1

21.1

21.3

19.6

dBm

Third Order

Input Intercept

Point

IIP3

10.8

12.5

14.4

14.9

dBm

Third Order

Output

Intercept Point

OIP3

32.1

32.2

33

33

dBm

tuned for specified frequency.

2. Noise figure value calculated with connector losses removed.

Table 2. Maximum Ratings

Rating

Symbol

Value

Unit

Supply Voltage

6

V

Supply Current

200

mA

RF Input Power

22

dBm

Storage Temperature Range

--65 to +150

C

Junction Temperature

175

C

Table 3. Thermal Characteristics

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case

43.4

C/W

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

Freescale Semiconductor

Technical Data

Document Number: MML20211H

Rev. 1, 9/2014

1400--2800 MHz, 18.6 dB

21.3 dBm

E--pHEMT LNA

DFN 2  2

MML20211HT1

 Freescale Semiconductor, Inc., 2011, 2014. All rights reserved.