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FEATURES 

DIRECT REPLACEMENT FOR INTERSIL LS3N170 

LOW DRAIN TO SOURCE RESISTANCE 

FAST SWITCHING 

ABSOLUTE MAXIMUM RATINGS (Note 1) 

@ 25°C (unless otherwise noted) 

Maximum Temperatures 

Storage Temperature ‐65°C to +150°C 

Operating Junction Temperature ‐55°C to +135°C 

Maximum Power Dissipation 

Continuous Power Dissipation  

300mW 

MAXIMUM CURRENT

Drain to Source  

30mA 

MAXIMUM VOLTAGES 

Drain to Gate 

±35V 

Drain to Source 

25V 

Peak Gate to Source  

±35V 

  

LS3N170 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL 

CHARACTERISTIC 

MIN 

TYP. 

MAX 

UNITS 

CONDITIONS 

Drain to Source Breakdown Voltage 

25 

‐‐ 

‐‐ 

 

V 

Drain to Source “On” Voltage 

‐‐ 

‐‐ 

2.0 

Gate to Source Threshold Voltage 

1.0 

‐‐ 

2.0 

Gate Leakage Current 

‐‐ 

‐‐ 

10 

pA 

VGS = ‐35V,   VDS = 0V 

Drain Leakage Current “Off” 

‐‐ 

‐‐ 

10 

nA 

VGS = 10V,   VDS = 10V 

Drain Current “On” 

10 

‐‐ 

‐‐ 

mA 

VGS = 10V,  VDS = 10V 

Forward Transconductance 

1000 

‐‐ 

‐‐ 

µS 

VDS = 10V,    ID = 2mA ,   f = 1kHz 

Drain to Source “On” Resistance 

‐‐ 

‐‐ 

200 Ω 

VGS = 10V,   ID = 0A,   f = 1kHz 

Reverse Transfer Capacitance 

‐‐ 

‐‐ 

1.3  

pF 

VDS = 0V,     VGS = 0V ,   f = 1MHz 

Input Capacitance 

‐‐ 

‐‐ 

5 

VDS = 10V,     VGS = 0V ,   f = 1MHz 

Drain to Body Capacitance 

‐‐ 

‐‐ 

5.0 

  

 

 

 

 

 

SWITCHING CHARACTERISTICS                                                                                                                                      

SYMBOL 

CHARACTERISTIC 

MAX 

UNITS 

CONDITIONS 

Turn On Delay Time 

3  

ns 

 

Turn On Rise Time 

10 

Turn Off Delay Time 

3 

Turn Off Fall Time 

15 

The LS3N170 is an enhancement mode N-Channel Mosfet

LS3N170

N-CHANNEL MOSFET

Micross Components Europe

Tel: +44 1603 788967

TO-72 (Bottom View)

Available Packages:

LS3N170 in TO-72

LS3N170 in bare die.

Please contact Micross for full

package and die dimensions

* Body tied to case

Note 1 ‐ Absolute maximum ratings are limiting values above which LS3N170 serviceability may be impaired. 

LS3N170 Features:

Low ON Resistance

Low Capacitance

High Gain

High Gate Breakdown Voltage

Low Threshold Voltage

The LS3N170 is an enhancement mode N-Channel

Mosfet designed for use as a General Purpose amplifier

or switch

The hermetically sealed TO-72 package is well suited

for high reliability and harsh environment applications.

(See Packaging Information).