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FEATURES 

ULTRA LOW DRIFT 

ULTRA LOW LEAKAGE 

LOW NOISE 

LOW CAPACITANCE 

ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) 

Maximum Temperatures 

Storage Temperature ‐65°C to +150°C 

Operating Junction Temperature 

+150°C 

Maximum Voltage and Current for Each Transistor – Note 1 

Gate Voltage to Drain or Source 

40V 

Drain to Source Voltage 

40V 

Gate Forward Current 

10mA 

Gate Reverse Current 

10µA 

Maximum Power Dissipation 

Device Dissipation @ Free Air – Total                 400mW @ +125°C 

 

MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED

SYMBOL 

CHARACTERISTICS 

VALUE 

UNITS 

CONDITIONS 

DRIFT VS. 

TEMPERATURE 

20 

µV/°C 

OFFSET VOLTAGE 

25 

mV 

ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL 

CHARACTERISTICS 

MIN. 

TYP. 

MAX. 

UNITS 

CONDITIONS 

Breakdown Voltage 

40 

60 

‐‐ 

V 

VDS = 0                  ID=1nA 

Gate‐To‐Gate Breakdown 

40 

‐‐ 

‐‐ 

V 

 

TRANSCONDUCTANCE 

Full Conduction 

 

70 

 

300 

 

500 

 

µmho 

 

VDG= 10V         VGS= 0V      f = 1kHz 

Typical Operation 

50 

100 

200 

µmho 

     VDG= 10V         ID= 30µA    f = 1kHz 

Mismatch 

‐‐ 

0.6 

3 

%  

 

DRAIN CURRENT 

Full Conduction 

 

0.5 

 

‐‐ 

 

10 

 

mA 

 

VDG= 10V              VGS= 0V 

Mismatch at Full Conduction 

‐‐ 

1 

5 

%  

 

GATE VOLTAGE 

Pinchoff voltage 

 

0.6 

 

2 

 

4.5 

 

V 

 

Operating Range 

‐‐ 

‐‐ 

4 

V 

 

GATE CURRENT 

Operating 

 

‐‐ 

 

‐‐ 

 

0.1 

 

pA 

 

High Temperature 

‐‐ 

‐‐ 

0.1 

nA 

 

At Full Conduction 

‐‐ 

‐‐ 

0.2 

pA 

High Temperature 

5 

5 

0.5 

nA 

Gate‐to‐Gate Leakage 

‐‐ 

1 

‐‐ 

pA 

 

OUTPUT CONDUCTANCE 

Full Conduction 

 

‐‐ 

 

‐‐ 

 

5 

 

µmho 

 

Operating 

‐‐ 

‐‐ 

0.5 

µmho 

 

CMR 

COMMON MODE REJECTION 

 

‐‐ 

 

90 

 

‐‐ 

 

dB 

 

‐‐ 

90 

‐‐ 

 

NF 

NOISE 

Figure 

 

‐‐ 

 

‐‐ 

 

1 

 

dB 

f= 100Hz           NBW= 6Hz 

Voltage 

‐‐ 

20 

70 

nV/√Hz 

 

CAPACITANCE 

Input 

 

‐‐ 

 

‐‐ 

 

3 

 

pF 

 

Reverse Transfer 

‐‐ 

‐‐ 

1.5 

pF 

Drain‐to‐Drain 

‐‐ 

‐‐ 

0.1 

pF 

LS832

MONOLITHIC DUAL

N-CHANNEL JFET

Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET

LS832 Applications:

Wideband Differential Amps

High-Speed,Temp-Compensated Single-

Ended Input Amps

High-Speed Comparators

Impedance Converters and vibrations

detectors.

The LS832 is a high-performance monolithic dual

JFET featuring extremely low noise, tight offset voltage

and low drift over temperature specifications, and is

targeted for use in a wide range of precision

instrumentation applications. The LS832 features a 25-

mV offset and 20-µV/°C drift.

The 8 Pin P-DIP and 8 Pin SOIC provide ease of

manufacturing, and the symmetrical pinout prevents

improper orientation.

(See Packaging Information).

Available Packages:

LS832 / LS832 in PDIP & SOIC

LS832 / LS832 available as bare die

Note 1 – These ratings are limiting values above which the serviceability of any semiconductor may be impaired

Tel: +44 1603 788967

PDIP & SOIC (Top View)