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LSK170 数据表(PDF) 1 Page - Micross Components |
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LSK170 数据表(HTML) 1 Page - Micross Components |
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1 / 1 page ![]() Click To Buy Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. FEATURES ULTRA LOW NOISE ( f = 1kHz) en = 0.9nV / √ Hz (typ) HIGH BREAKDOWN VOLTAGE BVGSS = 40V max HIGH GAIN Yfs = 22mS (typ) HIGH INPUT IMPEDANCE IG = ‐500pA max LOW CAPACITANCE 22pF max IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK170 ABSOLUTE MAXIMUM RATINGS 1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature ‐65°C to +150°C Operating Junction Temperature ‐55°C to +135°C Maximum Power Dissipation Continuous Power Dissipation @ + 125°C 400mW Maximum Currents Gate Forward Current IG(F) = 10mA Maximum Voltages Gate to Source VGSS = 40V Gate to Drain VGDS = 40V FOR EQUIVALENT DUAL VERSION, SEE LSK389 www.micross.com/pdf/LSM_LSK389A_SOIC.pdf ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. TYP. MAX. UNITS CONDITIONS BVGSS Gate to Source Breakdown Voltage 40 ‐‐ ‐‐ V VDS = 0, ID = 100µA VGS(OFF) Gate to Source Pinch‐off Voltage 0.2 ‐‐ 2 V VDS = 10V, ID = 1nA VGS Gate to Source Operating Voltage ‐‐ 0.5 ‐‐ V VDS = 10V, ID = 1mA IDSS Drain to Source Saturation Current 2SK170A / LSK170A 2.6 ‐‐ 6.5 mA VDG = 10V, VGS = 0V 2SK170B / LSK170B 6 ‐‐ 12 2SK170C / LSK170C 10 ‐‐ 20 IG Gate Operating Current ‐‐ ‐‐ 0.5 nA VDG = 10V, ID = 1mA IGSS Gate to Source Leakage Current ‐‐ ‐‐ 1 nA VDG = 10V, VDS = 0 Yfss Full Conduction Transconductance ‐‐ 22 ‐‐ mS VGD = 10V, VGS = 0V, f = 1kHz Yfs Typical Conduction Transconductance ‐‐ 10 ‐‐ mS VGD = 15V, ID = 1mA en Noise Voltage ‐‐ 0.9 1.9 nV/√Hz VDS = 10V, ID = 2mA, f = 1kHz, NBW = 1Hz en Noise Voltage ‐‐ 2.5 4 nV/√Hz VDS = 10V, ID = 2mA, f = 10Hz, NBW = 1Hz CISS Common Source Input Capacitance ‐‐ 20 ‐‐ pF VDS = 10V, VGS = 0V, f = 1MHz CRSS Common Source Reverse Transfer Capacitance ‐‐ 5 ‐‐ pF VDS = 15V, ID = 500µA Notes: 1. Absolute Maximum ratings are limiting values above which serviceability may be impaired LSK170 ULTRA LOW NOISE LOW CAPACITANCE J-FET Replace discontinued Toshiba 2SK170 with LSK170 The 2SK170 / LSK170 is a 1nV/√Hz low capacitance JFET Available Packages: LSK170 in SOT-23 LSK170 available as bare die Please contact Micross for full package and die dimensions: Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx 2SK170 / LSK170 Applications: Audio – Amps, effects boxes, microphones Instrumentation– Input stages Acoustic Sensors – Sonobuoys Military – Antisubmarine, personnel + vehicle detectors, sonar, radiation detectors… Optimized to provide low noise at both high and low frequency with a narrow range of IDSS and low capacitance. The 2SK170 / LSK170’s low noise to capacitance ratio and narrow range of low value IDSS provide solutions for low noise applications which cannot tolerate high values of capacitance or wide ranges of IDSS. The narrow ranges of IDSS binning with the 2SK170 / LSK170 promote ease of design tolerancing, particularly in low voltage applications. The 2SK170 / LSK170 is ideal for portable battery operated applications, and features high BVDSS for maximum linear headroom in high transient program content amplifiers. The 2SK170 / LSK170 series has a uniquely linear VGS transfer function for a stability that is highly desirable, particularly for audio front-end preamplifiers. SOT-23 (Top View) |
类似零件编号 - LSK170 |
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类似说明 - LSK170 |
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