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LSK170 数据表(PDF) 1 Page - Micross Components

部件名 LSK170
功能描述  Replace discontinued Toshiba 2SK170 with LSK170
PDF  1 Pages
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制造商  MICROSS [Micross Components]
网页  http://www.micross.com
标志 MICROSS - Micross Components

LSK170 数据表(HTML) 1 Page - Micross Components

  LSK170 Datasheet HTML 1Page - Micross Components  
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Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
FEATURES 
ULTRA LOW NOISE ( f = 1kHz) 
en = 0.9nV / √ Hz (typ) 
HIGH BREAKDOWN VOLTAGE  
   BVGSS = 40V max 
HIGH GAIN 
Yfs = 22mS (typ) 
HIGH INPUT IMPEDANCE 
I= ‐500pA max 
LOW CAPACITANCE 
22pF max 
IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK170 
ABSOLUTE MAXIMUM RATINGS 
1 
@ 25°C (unless otherwise noted) 
Maximum Temperatures 
Storage Temperature ‐65°C to +150°C 
Operating Junction Temperature ‐55°C to +135°C 
Maximum Power Dissipation 
Continuous Power Dissipation @ + 125°C 
400mW 
Maximum Currents 
Gate Forward Current 
IG(F) = 10mA 
Maximum Voltages 
Gate to Source 
VGSS = 40V 
Gate to Drain 
VGDS = 40V 
FOR EQUIVALENT DUAL VERSION, SEE LSK389 
www.micross.com/pdf/LSM_LSK389A_SOIC.pdf    
  
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTICS 
MIN. 
TYP. 
MAX. 
UNITS 
CONDITIONS 
BVGSS 
Gate to Source Breakdown Voltage 
40 
‐‐ 
‐‐ 
VDS = 0,  I= 100µA 
VGS(OFF) 
Gate to Source Pinch‐off Voltage 
0.2 
‐‐ 
VDS = 10V,  I= 1nA 
VGS 
Gate to Source Operating Voltage 
‐‐ 
0.5 
‐‐ 
VDS = 10V,  I= 1mA 
 
IDSS 
Drain to Source 
Saturation 
Current 
2SK170A / LSK170A 
2.6 
‐‐ 
6.5  
mA 
 
 
VDG = 10V,   VGS = 0V 
2SK170B / LSK170B 
‐‐ 
12 
2SK170C / LSK170C 
10 
‐‐ 
20 
IG 
Gate Operating Current 
‐‐ 
‐‐ 
0.5 
nA 
VDG = 10V,   I= 1mA 
IGSS 
Gate to Source Leakage Current 
‐‐ 
‐‐ 
nA 
VDG = 10V,   VDS = 0 
Yfss 
Full Conduction Transconductance 
‐‐ 
22 
‐‐ 
mS 
VGD = 10V,   VGS = 0V,   f = 1kHz    
Yfs 
Typical Conduction Transconductance 
‐‐ 
10 
‐‐ 
mS 
VGD = 15V,   I= 1mA 
en 
Noise Voltage 
‐‐ 
0.9 
1.9 
nV/√Hz 
VDS = 10V,  I= 2mA,  f = 1kHz,  NBW = 1Hz    
en 
Noise Voltage 
‐‐ 
2.5 
nV/√Hz 
VDS = 10V,  I= 2mA,  f = 10Hz,  NBW = 1Hz    
CISS 
Common Source Input Capacitance 
‐‐ 
20 
‐‐ 
pF 
VDS = 10V,   VGS = 0V,    f = 1MHz    
CRSS 
Common Source Reverse Transfer 
Capacitance 
‐‐ 
‐‐ 
pF 
VDS = 15V,   I= 500µA  
Notes: 
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
 
 
 
 
 
LSK170
ULTRA LOW NOISE
LOW CAPACITANCE J-FET
Replace discontinued Toshiba 2SK170 with LSK170
The 2SK170 / LSK170 is a 1nV/√Hz low capacitance JFET
Available Packages:
LSK170 in SOT-23
LSK170 available as bare die
Please contact Micross for full package and die dimensions:
Email: chipcomponents@micross.com
Web: www.micross.com/distribution.aspx
2SK170 / LSK170 Applications:
Audio – Amps, effects boxes, microphones
Instrumentation– Input stages
Acoustic Sensors – Sonobuoys
Military – Antisubmarine, personnel + vehicle
detectors, sonar, radiation detectors…
Optimized to provide low noise at both high and low
frequency with a narrow range of IDSS and low
capacitance. The 2SK170 / LSK170’s low noise to
capacitance ratio and narrow range of low value IDSS
provide solutions for low noise applications which
cannot tolerate high values of capacitance or wide
ranges of IDSS.
The narrow ranges of IDSS binning with the 2SK170 /
LSK170 promote ease of design tolerancing,
particularly in low voltage applications. The 2SK170 /
LSK170 is ideal for portable battery operated
applications, and features high BVDSS for maximum
linear headroom in high transient program content
amplifiers. The 2SK170 / LSK170 series has a uniquely
linear VGS transfer function for a stability that is highly
desirable, particularly for audio front-end preamplifiers.
SOT-23 (Top View)


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