Features:



Reduced Noise due to process improvement



Monolithic Design



High slew rate & high CMRR 102dB



Low offset/drift voltage



Benefits:



Tight differential match vs. current



Improved op amp speed settling time accuracy



Minimum Input Error trimming error voltage



Lower intermodulation distortion

Description:

The LSK 489 high performance monolithic dual JFETs features

extremely low noise, tight offset voltage and low drift over

temperature specifications, and is targeted for use in a wide

range of precision instrumentation applications.

LSK489 removes significant cost for test screening time needed

synchronous electrical performance and also offers better

matched performance when the chip is subjected to

temperature.

Availability:

LSK489 – TO-71 hermetic package

LSK489 – SOIC-A

LSK489 – SOT-23, 6 lead

LSK489 – BARE DIE

Contact Micross for full package dimensions

MAXIMUM RATINGS

LIMIT

MAXIMUM RATINGS

LIMIT

UNIT

SD210DE

SD214DE

Gate-Drain, Gate-Source

Voltage

±40V

±40V

Drain Current

50

mA

Gate-Substrate Voltage

±30V

±30V

Lead Temperature

300

°C

Drain-Source Voltage

30V

20V

Storage Temperature

-65 to 150

°C

Source-Drain Voltage

10V

20V

Operating Junction

Temperature

-55 to 125

°C

Drain -Substrate Voltage

30V

25V

Power Dissipation

300

mW

Source-Substrate Voltage

15V

25V

ELECTRICAL SPECIFICATION

PARAMETER

SYMB

OL

TEST CONDITIONS

TYP

LIMITS

UNIT

SD210DE

SD214DE

MIN

MAX

MIN

MAX

DRAIN-SOURCE BREAKDOWN

VOLTAGE

35

30

V

30

10

20

SOURCE-DRAIN BREAKDOWN

VOLTAGE

22

10

20

DRAIN-SUBSTRATE

BREAKDOWN VOLTAGE

Source Open

35

15

25

SOURCE-SUBSTRATE

BREAKDOWN VOLTAGE

Drain Open

35

15

25

DRAIN-SOURCE LEAKAGE

0.4

10

nA

0.9

10

SOURCE-DRAIN LEAKAGE

0.5

10

0.8

10

GATE LEAKAGE

0.001

0.1

0.1

V

THRESHOLD VOLTAGE

0.8

0.5

1.5

0.1

1.5

Ω

DRAIN-SOURCE-ON

RESISTANCE

58

70

70

38

45

45

30

26

24

DYNAMIC

FORWARD

TRANSCONDUCTANCE

SD210DE / SD214DE - Bare die and wafer form, contact

Micross for full datasheet and dimensions

ABSOLUTE MAXIMUM RATING

Storage Temperature

-55 to +150°C

Junction Operating Temperature

-55 to +150°C

Continuous Power Dissipation, per side

4

300mW

Power Dissipation, total

5

500mW

Gate Forward Current

Gate to Source Voltage

Gate to Drain Voltage

CHARACTERISTIC

SYMBOL

MIN

TYP

MAX

UNITS

CONDITIONS

DIFFERENTIAL GATE TO SOURCE CUTOFF

VOLTAGE

-

-

20

mV

GATE TO SOURCE SATURATION CURRENT RATIO

0.9

-

1.0

-

COMMON MODE REJECTION RATIO

CMRR

95

102

-

dB

NOISE VOLTAGE

-

1.8

2.0

nV / √Hz

NBW = 1Hz

-

2.8

3.5

NBW = 1Hz

COMMON SOURCE INPUT CAPACITANCE

-

4

8

pF

COMMON SOURCE REVERSE TRANSFER

CAPACITANCE

-

-

3

ELECTRICAL CHARACTERISTICS @ 25°C unless otherwise noted

CHARACTERISTIC

SYMBOL

MIN

TYP

MAX

UNITS

CONDITIONS

GATE TO SOURCE BREAKDOWN VOLTAGE

-60

-

-

V

GATE TO GATE BREAKDWON VOLTAGE

±30

±45

-

V

GATE TO SOURCE PINCH-OFF VOLTAGE

-1.5

-

-3.5

V

GATE TO SOURCE OPERATING VOLTAGE

-0.5

-

-3.5

V

DRAIN TO SOURCE SATURATION CURRENT

2

2.5

5

15

mA

GATE OPERATING CURRENT

-

-2

-25

pA

-

-0.8

-10

nA

GATE TO SOURCE LEAKAGE CURRENT

-

-

-100

pA

FULL CONDUCTION TRANSCONDUCTANCE

1500

-

-

µS

TRANSCONDUCTANCE

1000

1500

-

FULL OUTPUT CONDUCTANCE

-

-

35

OUTPUT CONDUCTANCE

-

0.2

2

NOISE FIGURE

NF

-

-

0.5

dB

f = 100Hz, NBW = 6Hz

polarity only, Note 4 - Derate 2.4mW/°C above 25°C, Note 5 - Derate 4mW/°C above 25°C

Applications:



Wide band differential Amps



High speed temperature compensated single ended input

amplifiers



High speed comparators



Impedance convertors



High-Speed Driver

LSK489

Information Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties

which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

Pinout: