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Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or

other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

FEATURES 

Direct Replacement for SILICONIX SST440 

HIGH CMRR 

CMRR ≥ 85dB 

LOW GATE LEAKAGE 

ABSOLUTE MAXIMUM RATINGS 

@ 25°C (unless otherwise noted) 

Maximum Temperatures 

Storage Temperature ‐65°C to +150°C 

Operating Junction Temperature ‐55°C to +135°C 

Maximum Power Dissipation 

Continuous Power Dissipation (Total) 

500mW 

Maximum Currents 

Gate Current 

50mA 

Maximum Voltages 

Gate to Drain ‐25V 

Gate to Source ‐25V 

Gate to Gate 

±50V 

  

  

  

  

MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) 

SYMBOL 

CHARACTERISTIC 

MIN 

TYP 

MAX 

UNITS 

CONDITIONS 

Differential Gate to Source Cutoff Voltage  

 

10 

mV 

VDG = 10V, ID = 5mA           

 

Differential Gate to Source Cutoff  

Voltage Change with Temperature 

 

20 

 

µV/°C 

VDG = 10V, ID = 5mA      

TA = ‐55°C to +125°C 

 

Gate to Source Saturation Current Ratio 

 

0.07 

 

 

VDS = 10V, VGS = 0V 

 

Forward Transconductance Ratio

2  

0.97 

 

 

VDS = 10V, ID = 5mA, f = 1kHz 

CMRR 

Common Mode Rejection Ratio  

85 

 

dB 

 

ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL 

CHARACTERISTICS 

MIN. 

TYP. 

MAX. 

UNITS 

CONDITIONS 

Gate to Source Breakdown Voltage ‐25  

 

V 

Gate to Source Cutoff Voltage ‐1 ‐3.5 ‐6 

V 

Gate to Source Saturation Current 

6 

15 

30 

mA 

Gate Leakage Current

‐1 ‐500 

pA 

Gate Operating Current  

‐1 ‐500 

pA 

Forward Transconductance 

4.5 

6 

9 

mS 

Output Conductance  

70 

200 

µS 

Input Capacitance  

3  

pF 

Reverse Transfer Capacitance  

1  

pF 

Equivalent Input Noise Voltage  

4  

nV/√Hz 

Notes: 

1. Absolute Maximum ratings are limiting values above which serviceability may be impaired

2. Pulse Test: PW ≤ 300µs Duty Cycle ≤ 3% 

3. Assumes smaller value in numerator 

The SST440 is a tightly matched Monolithic Dual N-Channel JFET

SST440

MONOLITHIC DUAL

N-CHANNEL JFET

SST440 Applications:

Wideband Differential Amps

High-Speed,Temp-Compensated Single-

Ended Input Amps

High-Speed Comparators

Impedance Converters and vibrations

The SST440 are monolithic dual JFETs mounted in a

SOIC package. The monolithic dual chip design

reduces parasitics and gives better performance at very

high frequencies while ensuring extremely tight

matching. These devices are an excellent choice for

use as wideband differential amplifiers in demanding

test and measurement applications. The SST440 is a

direct replacement for discontinued Siliconix SST440.

The 8 Pin SOIC provides ease of manufacturing, and

the symmetrical pinout prevents improper orientation.

(See Packaging Information).

Linear Systems replaces discontinued Siliconix SST440

Available Packages:

SST440 in SOIC

SST440 available as bare die

Please contact Micross for full package and die dimensions:

SOIC (Top View)