STTH4R02UY datasheet(2/9 Pages) STMICROELECTRONICS

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Characteristics

STTH4R02-Y

2/9

Doc ID 17391 Rev 1

Characteristics

To evaluate the conduction losses use the following equation:

P = 0.67 x IF(AV) + 0.04 IF

(RMS)

Table 2.

Absolute ratings (limiting values at Tj = 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

200

IF(RMS) Forward rms current

IF(AV)

Average forward current,

δ = 0.5

Tc = 95 °C

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

Tstg

Storage temperature range

-65 to +175

°C

Operating junction temperature range

-40 to +175

°C

Table 3.

Thermal parameters

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

°C/W

Table 4.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

Pulse test: tp = 5 ms, δ < 2 %

Reverse leakage

current

Tj = 25 °C

VR = VRRM

µA

Tj = 125 °C

(2)

Pulse test: tp = 380 µs, δ < 2 %

Forward voltage drop

Tj = 25 °C

IF = 12 A

1.15

1.25

Tj = 25 °C

IF = 4 A

0.95

1.05

Tj = 150 °C

0.76

0.83

Table 5.

Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

trr

Reverse recovery

time

IF = 1 A, dIF/dt = -50 A/µs,

VR = 30 V, Tj = 25 °C

IF = 1 A, dIF/dt = -100 A/µs,

VR = 30 V, Tj = 25 °C

IRM

Reverse recovery

current

IF = 4 A, dIF/dt = -200 A/µs,

VR = 160 V, Tj = 125 °C

4.4

5.5

tfr

Forward recovery

time

IF = 4 A, dIF/dt = 50 A/µs

VFR = 1.1 x VFmax, Tj = 25 °C

VFP

Forward recovery

voltage

IF = 4 A, dIF/dt = 50 A/µs,

Tj = 25 °C

1.6

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