©Silikron Semiconductor CO.,LTD.

2

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v1.1

SSF2816EB

Zero Gate Voltage Drain Current

1

μA

Gate-Body Leakage Current

±200

nA

±10

uA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

0.6

0.75

1.2

V

Drain-Source On-State Resistance

16.5

22

mΩ

17

23

mΩ

19

26

mΩ

22

30

mΩ

Forward Transconductance

6.6

S

DYNAMIC CHARACTERISTICS (Note4)

Input Capacitance

F=1.0MHz

600

PF

Output Capacitance

330

PF

Reverse Transfer Capacitance

140

PF

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

10

20

nS

Turn-on Rise Time

11

25

nS

Turn-Off Delay Time

35

70

nS

Turn-Off Fall Time

30

60

nS

Total Gate Charge

10

15

nC

Gate-Source Charge

2.3

nC

Gate-Drain Charge

3

nC

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

0.84

1.2

V

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2.

Surface Mounted on FR4 Board, t ≤ 10 sec.

3.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production testing.