SSF5506 datasheet(2/8 Pages) SILIKRON

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SSF5506

©Silikron Semiconductor CO.,LTD.

2013.08.13

Version : 1.1

page 2 of 8

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Thermal Resistance

Symbol

Characterizes

Typ.

Max.

Units

RθJC

Junction-to-case③

—

0.68

℃

RθJA

Junction-to-ambient (t ≤ 10s) ④

—

℃

Junction-to-Ambient (PCB mounted, steady-state) ④

—

℃

Electrical Characterizes @TA=25℃ unless otherwise specified

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

V(BR)DSS

Drain-to-Source breakdown voltage

—

VGS = 0V, ID = 250μA

RDS(on)

Static Drain-to-Source on-resistance

—

3.8

mΩ

VGS=10V,ID = 75A

—

6.4

—

TJ = 125℃

VGS(th)

Gate threshold voltage

—

VDS = VGS, ID = 250μA

—

2.2

—

TJ = 125℃

IDSS

Drain-to-Source leakage current

—

μA

VDS = 55V,VGS = 0V

—

TJ = 125°C

IGSS

Gate-to-Source forward leakage

—

100

VGS =20V

—

-100

VGS = -20V

Total gate charge

—

150

—

ID = 101A,

VDS=44V,

VGS = 10V

Qgs

Gate-to-Source charge

—

Qgd

Gate-to-Drain("Miller") charge

—

td(on)

Turn-on delay time

—

VGS=10V,

ID = 60A VDS=38V,

RG=1.1Ω

Rise time

—

td(off)

Turn-Off delay time

—

Fall time

—

Ciss

Input capacitance

—

6206

—

VGS = 0V

VDS = 25V

ƒ = 900KHz

Coss

Output capacitance

—

672

—

Crss

Reverse transfer capacitance

—

538

—

Source-Drain Ratings and Characteristics

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

Continuous Source Current

(Body Diode)

—

140

MOSFET symbol

showing the

integral reverse

p-n junction diode.

ISM

Pulsed Source Current

(Body Diode)

—

520

Diode Forward Voltage

—

0.93

1.3

IS=75A, VGS=0V

trr

Reverse Recovery Time

—

TJ = 25°C, IF =90A, di/dt =

100A/μs

Qrr

Reverse Recovery Charge

—

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