Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

May. 2014. Rev. 2.0

Features

■ High ruggedness

■ R

■ Gate Charge (Typical 7nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

N-channel IPAK MOSFET

Absolute maximum ratings

Thermal characteristics

Symbol

Parameter

Value

Unit

R

thjc

Thermal resistance, Junction to case

1.65

R

thcs

Thermal resistance, Case to Sink

R

thja

Thermal resistance, Junction to ambient

92

1/5

BV

I

D

: 1A

R

1

2

3

SW1N55D

SAMWIN

Item

Sales Type

Marking

Package

Packaging

1

SW I 1N55

SW1N55D

TO-251

TUBE

Order Codes

Symbol

Parameter

Value

Unit

V

DSS

Drain to Source Voltage

550

V

I

D

Continuous Drain Current (@T

1*

A

Continuous Drain Current (@T

0.6*

A

I

DM

Drain current pulsed

(note 1)

4

A

V

GS

Gate to Source Voltage

± 30

V

E

AS

Single pulsed Avalanche Energy

(note 2)

81.9

mJ

E

AR

Repetitive Avalanche Energy

(note 1)

20.7

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

77.1

W

0.62

T

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

T

L

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics. This power MOSFET is usually used at high efficient DC to DC

converter block and switch mode power supply.

*. Drain current is limited by junction temperature.

1. Gate 2. Drain 3. Source

1

2

3

TO-251