Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

May. 2014. Rev.1.0

Features

■ High ruggedness

■ R

■ Gate Charge (Typical 13nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

N-channel SOT-23 MOSFET

Absolute maximum ratings

1/5

BV

I

D

: 2A

R

1

2

3

SAMWIN

Item

Sales Type

Marking

Package

Packaging

1

SW E 2N10

SW2N10

SOT-23

RELL

Order Codes

Symbol

Parameter

Value

Unit

V

DSS

Drain to Source Voltage

100

V

I

D

Continuous Drain Current (@T

2*

A

Continuous Drain Current (@T

1.26*

A

I

DM

Drain current pulsed

(note 1)

8

A

V

GS

Gate to Source Voltage

± 15

V

E

AS

Single pulsed Avalanche Energy

(note 2)

64

mJ

E

AR

Repetitive Avalanche Energy

(note 1)

5

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

5

V/ns

T

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

T

L

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics. This power MOSFET is usually used at high efficient DC to DC

converter block and switch mode power supply.

*. Drain current is limited by junction temperature.

1. Gate 2. Source 3. Drain

1

2

3

SOT-23

SW2N10