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SW7N60 数据表(PDF) 2 Page - Xian Semipower Electronic Technology Co., Ltd.

部件名 SW7N60
功能描述  N-channel Mosfet
PDF  5 Pages
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制造商  SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]
网页  http://www.samwinsemi.com
标志 SEMIPOWER - Xian Semipower Electronic Technology Co., Ltd.

SW7N60 数据表(HTML) 2 Page - Xian Semipower Electronic Technology Co., Ltd.

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Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2012. Rev. 3.0
2/5
SAMWIN
Electrical characteristic ( T
C = 25
oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Off characteristics
BVDSS
Drain to source breakdown voltage
VGS=0V, ID=250uA
600
-
-
V
ΔBV
DSS
/ ΔT
J
Breakdown voltage temperature
coefficient
ID=250uA, referenced to 25oC
-
0.57
-
V/oC
IDSS
Drain to source leakage current
VDS=600V, VGS=0V
-
-
1
uA
VDS=480V, TC=125oC
-
-
20
uA
IGSS
Gate to source leakage current, forward
VGS=30V, VDS=0V
-
-
100
nA
Gate to source leakage current, reverse
VGS=-30V, VDS=0V
-
-
-100
nA
On characteristics
VGS(TH)
Gate threshold voltage
VDS=VGS, ID=250uA
2.0
-
4.0
V
RDS(ON)
Drain to source on state resistance
VGS=10V, ID = 3.5A
-
1.0
1.3
Ω
Gfs
Forward Transconductance
VDS = 40 V, ID = 3.5 A
5
-
-
S
Dynamic characteristics
Ciss
Input capacitance
VGS=0V, VDS=25V, f=1MHz
-
960
1260
pF
Coss
Output capacitance
-
110
135
Crss
Reverse transfer capacitance
-
15
18
td(on)
Turn on delay time
VDS=300V, ID=7A, RG=25Ω
(note 4，5)
-
15
50
ns
tr
Rising time
-
30
80
td(off)
Turn off delay time
-
100
150
tf
Fall time
-
38
100
Qg
Total gate charge
VDS=480V, VGS=10V, ID=7A
(note 4，5)
-
32
50
nC
Qgs
Gate-source charge
-
5.7
-
Qgd
Gate-drain charge
-
13
-
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IS
Continuous source current
Integral reverse p-n Junction
diode in the MOSFET
-
-
7
A
ISM
Pulsed source current
-
-
28
A
VSD
Diode forward voltage drop.
IS=7A, VGS=0V
-
-
1.5
V
Trr
Reverse recovery time
IS=7A, VGS=0V,
dIF/dt=100A/us
-
357
-
ns
Qrr
Breakdown voltage charge
-
3.67
-
nC
※. Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L = 9.4mH, IAS = 7A, VDD = 50V, RG=25Ω, Starting TJ = 25oC
3.
ISD ≤ 7A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
4.
Pulse Test : Pulse Width
≤ 300us, duty cycle ≤ 2%
5.
Essentially independent of operating temperature.
SW7N60



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