Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

Feb. 2014. Rev.1.0

Features

■ High ruggedness

■ R

■ Gate Charge (Typical 21nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

General Description

This power MOSFET is produced with advanced super-junction technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast

switching time, excellent avalanche characteristics, low gate charge and especially in

low on resistance. This power MOSFET is usually used at high efficient DC to DC converter

block and switch mode power supply.

N-channel TO-220F/I-PAK MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220F

TO-251

V

DSS

Drain to Source Voltage

600

V

I

D

Continuous Drain Current (@T

7*

A

Continuous Drain Current (@T

4.4*

A

I

DM

Drain current pulsed

(note 1)

28

A

V

GS

Gate to Source Voltage

± 30

V

E

AS

Single pulsed Avalanche Energy

(note 2)

120

mJ

E

AR

Repetitive Avalanche Energy

(note 1)

8

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

24

V/ns

P

D

Total power dissipation (@T

19.8

166.7

W

0.16

1.33

T

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

T

L

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-220F

TO-251

R

thjc

Thermal resistance, Junction to case

6.32

0.75

R

thcs

Thermal resistance, Case to Sink

R

thja

Thermal resistance, Junction to ambient

47.56

80.52

1/6

*. Drain current is limited by junction temperature.

BV

I

D

: 7.0A

R

1. Gate 2. Drain 3. Source

TO-220F

SW7N60K

SAMWIN

1

2

3

Item

Sales Type

Marking

Package

Packaging

1

SW F 7N60

SW7N60K

TO-220F

TUBE

2

SW I 7N60

SW7N60K

TO-251

TUBE

Order Codes

TO-251

1

2

3

1

2

3