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SW15N50 数据表(PDF) 2 Page - Xian Semipower Electronic Technology Co., Ltd.

部件名 SW15N50
功能描述  N-channel TO-220F MOSFET
PDF  5 Pages
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制造商  SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]
网页  http://www.samwinsemi.com
标志 SEMIPOWER - Xian Semipower Electronic Technology Co., Ltd.

SW15N50 数据表(HTML) 2 Page - Xian Semipower Electronic Technology Co., Ltd.

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Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2013. Rev. 3.0
2/5
SAMWIN
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Off characteristics
BVDSS
Drain to source breakdown voltage
VGS=0V, ID=250uA
500
V
ΔBVDSS
/ ΔTJ
Breakdown voltage temperature
coefficient
ID=250uA, referenced to 25oC
0.57
V/oC
IDSS
Drain to source leakage current
VDS=500V, VGS=0V
1
uA
VDS=400V, TC=125oC
50
uA
IGSS
Gate to source leakage current, forward
VGS=30V, VDS=0V
100
nA
VGS=-30V, VDS=0V
-100
nA
Gate to source leakage current, reverse
On characteristics
VGS(TH)
Gate threshold voltage
VDS=VGS, ID=250uA
2.0
4.0
V
RDS(ON)
Drain to source on state resistance
VGS=10V, ID =7.5A
0.26
0.32
Ω
Gfs
Forward Transconductance
VDS = 20 V, ID =7.5A
19
S
Dynamic characteristics
Ciss
Input capacitance
VGS=0V, VDS=25V, f=1MHz
2610
pF
Coss
Output capacitance
283
Crss
Reverse transfer capacitance
10
td(on)
Turn on delay time
VDS=250V, ID=15A, RG=25Ω
(note 4,5)
30
60
ns
tr
Rising time
47
90
td(off)
Turn off delay time
144
200
tf
Fall time
45
90
Qg
Total gate charge
VDS=400V, VGS=10V, ID=15A
(note 4,5)
66
120
nC
Qgs
Gate-source charge
14
Qgd
Gate-drain charge
29
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IS
Continuous source current
Integral reverse p-n Junction
diode in the MOSFET
15.0
A
ISM
Pulsed source current
60
A
VSD
Diode forward voltage drop.
IS=15A, VGS=0V
1.4
V
Trr
Reverse recovery time
IS=15A, VGS=0V,
dIF/dt=100A/us
363
ns
Qrr
Reverse recovery Charge
5.5
uC
※
. Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L = 16.1 mH, IAS = 15A, VDD = 50V, RG=25Ω, Starting TJ = 25oC
3.
ISD ≤ 15A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
4.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
5.
Essentially independent of operating temperature.
SW15N50
SW15N50



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