Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

July. 2013. Rev. 3.0

1/5

Features

■ High ruggedness

■ R

Ω)@V

■ Gate Charge (Typ 74nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics. This power MOSFET is usually used at high efficient DC to DC

converter block and switch mode power supply.

N-channel TO-220 MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

Drain to Source Voltage

80

V

75*

A

47*

A

Drain current pulsed

(note 1)

300

A

Gate to Source Voltage

±30

V

Single pulsed Avalanche Energy

(note 2)

890

mJ

Repetitive Avalanche Energy

(note 1)

160

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

5

V/ns

227

W

1.8

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

Thermal resistance, Junction to case

0.55

Thermal resistance, Case to Sink

0.5

Thermal resistance, Junction to ambient

56

*. Drain current is limited by junction temperature.

BV

I

D

: 75A

R

Ω

1. Gate 2. Drain 3. Source

1

2

3

SW75N08

SAMWIN

Item

Sales Type

Marking

Package

Packaging

1

SW P 75N08

SW 75N08

TO-220

TUBE

Order Codes

1

2

3

TO-220