Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

July. 2013. Rev. 3.0

1/5

Features

■ High ruggedness

■ R

Ω)@V

■ Gate Charge (Typ 22nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics,

such as fast switching time, low on resistance, low gate charge and especially

excellent avalanche characteristics. This power MOSFET is usually used

at high efficient DC to DC converter block and SMPS.

It’s typical application is TV and monitor.

N-channel TO-220/D-PAK MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220

TO-252

Drain to Source Voltage

200

V

10*

A

6.3*

A

Drain current pulsed

(note 1)

40

A

Gate to Source Voltage

±30

V

Single pulsed Avalanche Energy

(note 2)

600

mJ

Repetitive Avalanche Energy

(note 1)

120

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

5

V/ns

132

148

W

1.06

1.18

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-220

TO-252

Thermal resistance, Junction to case

0.95

0.85

Thermal resistance, Case to Sink

0.5

-

Thermal resistance, Junction to ambient

57.5

-

*. Drain current is limited by junction temperature.

BV

I

D

: 10A

R

1. Gate 2. Drain 3. Source

1

2

3

1

2

3

TO-220

SW630A

SAMWIN

Order Codes

2

3

1

TO-252

Item

Sales Type

Marking

Package

Packaging

1

SW P 630A

SW630

TO-220

TUBE

2

SW D 630A

SW630

TO-252

REEL