SSFD3006 datasheet(2/8 Pages) SILIKRON

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SSFD3006

©Silikron Semiconductor CO.,LTD.

2011.10.10

Version : 1.0

page 2 of 8

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Thermal Resistance

Symbol

Characterizes

Typ.

Max.

Units

RθJC

Junction-to-case③

—

℃

Junction-to-ambient (

t ≤ 10s) ④

—

100

℃

RθJA

Junction-to-Ambient (PCB mounted, steady-state) ④

—

℃

Electrical Characterizes @TA=25℃ unless otherwise specified

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

V(BR)DSS

Drain-to-Source breakdown

voltage

—

VGS = 0V, ID = 250μA

—

3.8

VGS=10V,ID = 15A

—

6.4

—

TJ = 125℃

—

4.9

8.5

VGS=4.5V,ID =11.5A

RDS(on)

Static Drain-to-Source

on-resistance

—

7.2

—

mΩ

TJ = 125℃

1.5

VDS = VGS, ID = 250μA

VGS(th)

Gate threshold voltage

—

1.21

—

TJ = 125℃

—

VDS = 30V,VGS = 0V

IDSS

Drain-to-Source leakage

current

—

μA

TJ = 125°C

—

100

VGS =20V

IGSS

Gate-to-Source forward

leakage

-100

—

VGS = -20V

Total gate charge

—

Qgs

Gate-to-Source charge

—

Qgd

Gate-to-Drain("Miller") charge

—

ID = 32A,

VDS=15V,

VGS =4.5V

td(on)

Turn-on delay time

—

Rise time

—

td(off)

Turn-Off delay time

—

Fall time

—

VGS=4.5V, VDS=15V,

RGEN=2Ω，ID = 32A,

Ciss

Input capacitance

—

3833

—

Coss

Output capacitance

—

459

—

Crss

Reverse transfer capacitance

—

427

—

VGS = 0V

VDS = 15V

ƒ = 800kHz

Source-Drain Ratings and Characteristics

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

Maximum Body-Diode

Continuous Curren

—

VSD

Diode Forward Voltage

—

0.72

1.2

IS=2.8A, VGS=0V

trr

Reverse Recovery Time

—

Qrr

Reverse Recovery Charge

—

8.8

—

TJ = 25°C, IF =30A,

di/dt = 150A/μs

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