SSFD4004 datasheet(2/8 Pages) SILIKRON

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SSFD4004

©Silikron Semiconductor CO.,LTD.

2012.02.01

Version : 1.0

page 2 of 8

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Thermal Resistance

Symbol

Characterizes

Typ.

Max.

Units

RθJC

Junction-to-case ③

—

0.98

℃/W

RθJA

Junction-to-ambient (t ≤ 10s) ④

—

℃/W

Junction-to-Ambient (PCB mounted, steady-state) ④

—

℃/W

Electrical Characterizes @T

A=25℃ unless otherwise specified

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

V(BR)DSS

Drain-to-Source breakdown voltage

—

VGS = 0V, ID = 250μA

RDS(on)

Static Drain-to-Source on-resistance

—

3.2

mΩ

VGS=10V,ID = 30A

—

6.17

—

TJ = 125°C

VGS(th)

Gate threshold voltage

—

VDS = VGS, ID = 250μA

—

1.11

—

TJ = 125°C

IDSS

Drain-to-Source leakage current

—

μA

VDS = 40V,VGS = 0V

—

TJ = 125°C

IGSS

Gate-to-Source forward leakage

—

100

VGS =20V

—

-100

VGS = -20V

Total gate charge

—

52.3

—

ID = 20A,

VDS=15V,

VGS = 4.5V

Qgs

Gate-to-Source charge

—

20.3

—

Qgd

Gate-to-Drain("Miller") charge

—

23.1

—

td(on)

Turn-on delay time

—

15.9

—

VGS=10V, VDS =15V,

RL=0.75Ω,

RGEN=3Ω

ID =20A

Rise time

—

49.0

—

td(off)

Turn-Off delay time

—

61.6

—

Fall time

—

25.6

—

Ciss

Input capacitance

—

6653

—

VGS = 0V

VDS = 15V

ƒ =1MHz

Coss

Output capacitance

—

632

—

Crss

Reverse transfer capacitance

—

603

—

Source-Drain Ratings and Characteristics

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

Continuous Source Current

(Body Diode)

—

145①

MOSFET symbol

showing

the

integral reverse

p-n junction diode.

ISM

Pulsed Source Current

(Body Diode)

—

580

Diode Forward Voltage

—

0.72

1.2

IS=2.1A, VGS=0V

trr

Reverse Recovery Time

—

30.8

—

TJ = 25°C, IF =20A, di/dt =

0A/μs

Qrr

Reverse Recovery Charge

—

31.1

—

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