SSFD6046

Total gate charge

—

7.5

—

Ga

e

te-to-Source charg

—

1.2

—

Ga

e

nC

te-to-Drain("Miller") charg

—

2

—

Turn-on delay time

—

4.5

—

Rise time

—

3.5

—

2010.09.01

Version: 1.

1

page

2of4

Turn

ime

(off)

-Off delay t

—

16

—

Fall time

—

2

—

nS

V

C

Input

nce

450

iss

capacita

—

—

Output capacitance

—

60

—

Reve

nce

pF

rse transfer capacita

—

25

—

f=1.0MHZ

ource-Drain Ratings and Characteristics

Typ.

Max.

Units

Test Conditions

S

Parameter

Min.

Continu

urrent

ous Source C

(Body Diode)

—

—

12

Puls

rent

—

—

30

A

MOSFET

integral reverse

p

ed Source Cur

(Body Diode) ①

symbol

showing the

-n junction diode.

Di

e

V

GS

ode Forward Voltag

—

—

1

Reverse Recovery Time

—

25

—

nS

R

d

everse Recovery Charge

—

30

—

nC

i/dt=100A/μs ③

Forward Turn-on Time

Intrinsic turn-on time is ne

ble (turn-on is

LD)

gligi

dominated by Ls +

Notes:

①

Repetitive rating; pulse width limited by max junction temperature.

Ω Starting TJ = 25°C

②

Test condition: L =0.1mH, VDD = 40V,Id=10A

③

Pulse width≤300μS, duty cycle≤1.5% ; RG = 25