2

TN2501

O

C unless otherwise specified)

Sym

Parameter

Min

Typ

Max

Units Conditions

BV

DSS

Drain-to-source breakdown voltage

18

-

-

V

V

V

GS(th)

Gate threshold voltage

0.3

-

1.0

V

V

ΔV

GS(th)

Change in V

-

-

I

GSS

Gate body leakage

-

-

100

nA

V

I

DSS

Zero gate voltage drain current

-

-

10

µA

V

-

-

1.0

mA

V

V

I

D(ON)

On-state drain current

250

600

-

A

V

R

DS(ON)

Static drain-to-source on-state resistance

-

-

25

Ω

V

-

-

3.5

V

-

-

2.5

V

ΔR

DS(ON)

Change in R

-

-

0.75

G

FS

Forward transductance

150

300

-

mmho V

C

ISS

Input capacitance

-

-

110

pF

V

V

f = 1.0MHz

C

OSS

Common source output capacitance

-

-

60

C

RSS

Reverse transfer capacitance

-

-

35

t

d(ON)

Turn-on delay time

-

-

5.0

ns

V

I

R

t

r

Rise time

-

-

15

t

d(OFF)

Turn-off delay time

-

-

15

t

f

Fall time

-

-

8.0

V

SD

Diode forward voltage drop

-

1.1

1.8

V

V

t

rr

Reverse recovery time

-

100

-

ns

V

Notes:

2. All A.C. parameters sample tested.

Notes:

† I

‡ Mounted on FR5 Board, 25mm x 25mm x 1.57mm.

Thermal Characteristics

Package

I

D

(mA)

I

D

(pulsed)

(mA)

Power Dissipation

@T

O

C

(W)

θ

jc

θ

ja

I

DR

†

(mA)

I

DRM

(mA)

TO-243AA (SOT-89)

400

560

15

560

750

Switching Waveforms and Test Circuit

90%

10%

90%

90%

10%

10%

PULSE

GENERATOR

OUTPUT

D.U.T.

INPUT

INPUT

OUTPUT

10V

0V

0V