2

LP0701

Thermal Characteristics

Package

I

D

(continuous

(mA)

I

D

(A)

Power Dissipation

@T

O

C

(W)

θ

jc

θ

ja

I

DR

(mA)

I

DRM

†

(A)

8-Lead SOIC

-700

-1.25

83

-700

-1.25

TO-92

-500

-1.25

1.0

125

170

-500

-1.25

Notes:

† I

‡ Mounted on FR4 board, 25mm x 25mm x 1.57mm

Sym

Parameter

Min

Typ

Max

Units

Conditions

BV

DSS

Drain-to-source breakdown voltage

-16.5

-

-

V

V

V

GS

Gate threshold voltage

-0.5

-0.7

-1.0

V

V

ΔV

GS(th)

Change in V

-

-

-4.0

I

GSS

Gate body leakage

-

-

-100

nA

V

I

DSS

Zero gate voltage drain current

-

-

-100

nA

V

-

-

-1.0

mA

V

V

O

C

I

D(ON)

On-state drain current

-

-0.4

-

A

V

-0.6

-1.0

-

V

-1.25

-2.3

-

V

R

DS(ON)

Static drain-to-source on-state

resistance

-

2.0

4.0

Ω

V

-

1.7

2.0

V

-

1.3

1.5

V

ΔR

DS(ON)

Change in R

-

-

0.75

V

G

FS

Forward transconductance

500

700

-

mmho V

C

ISS

Input capacitance

-

120

250

pF

V

V

f = 1.0MHz

C

OSS

Common source output capacitance

-

100

125

C

RSS

Reverse transfer capacitance

-

40

60

t

d(ON)

Turn-on delay time

-

-

20

ns

V

I

R

t

r

Rise time

-

-

20

t

d(OFF)

Turn-off delay time

-

-

30

t

f

Fall time

-

-

30

V

SD

Diode forward voltage drop

-

-1.2

-1.5

V

V

Notes:

All A.C. parameters sample tested.

1.

2.

90%

10%

90%

90%

10%

10%

Pulse

Generator

V

DD

R

L

Output

D.U.T.

t

(ON)

t

d(ON)

t

(OFF)

t

d(OFF)

t

f

t

r

INPUT

INPUT

OUTPUT

0V

VDD

R

GEN

0V

-10V

Switching Waveforms and Test Circuit