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ST7232A 数据表(PDF) 124 Page - STMicroelectronics |
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ST7232A 数据表(HTML) 124 Page - STMicroelectronics |
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124 / 157 page ![]() ST7232A 124/157 12.6 MEMORY CHARACTERISTICS 12.6.1 RAM and Hardware Registers 12.6.2 FLASH Memory Notes: 1. Minimum VDD supply voltage without losing data stored in RAM (in HALT mode or under RESET) or in hardware reg- isters (only in HALT mode). Not tested in production. 2. Data based on characterization results, not tested in production. 3. VPP must be applied only during the programming or erasing operation and not permanently for reliability reasons. 4. Data based on simulation results, not tested in production. Symbol Parameter Conditions Min Typ Max Unit VRM Data retention mode 1) HALT mode (or RESET) 1.6 V DUAL VOLTAGE HDFLASH MEMORY Symbol Parameter Conditions Min 2) Typ Max 2) Unit fCPU Operating frequency Read mode 0 8 MHz Write / Erase mode 1 8 VPP Programming voltage 3) 4.5V ≤ V DD ≤ 5.5V 11.4 12.6 V IDD Supply current4) Write / Erase 0 mA IPP VPP current 4) Read (VPP=12V) 200 µA Write / Erase 30 mA tVPP Internal VPP stabilization time 10 µs tRET Data retention TA=85°C 40 years NRW Write erase cycles TA=25°C 100 cycles TPROG TERASE Programming or erasing tempera- ture range -40 25 85 °C 1 |
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