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20080227a

VTO 110

VTO 175

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

100

200

300

400

500

600

700

800

900

A

s

I

FSM

t

s

t

K/W

Z

thJC

50 Hz

80% V

RRM

T

T

Dimensions in mm (1 mm = 0.0394")

Symbol

Test Conditions

Characteristic Values

VTO 110

VTO 175

I

V

T

≤

5mA

T

≤

0.3

mA

V

I

≤ 1.75

1.57

V

V

T0

For power-loss calculations only

0.85

0.85

V

r

T

(T

6

3.5

m

Ω

V

GT

V

T

≤

1.5

V

T

≤

1.6

V

I

GT

V

T

≤

100

mA

T

≤

200

mA

V

GD

T

≤

0.2

V

I

GD

T

≤

5mA

I

L

I

T

≤

450

mA

di

I

H

T

200

mA

t

gd

T

≤

2µs

I

R

thJC

per thyristor (diode); DC current

0.65

0.46

K/W

per module

0.108

0.077

K/W

R

thJH

per thyristor (diode); DC current

0.8

0.55

K/W

per module

0.133

0.092

K/W

d

S

Creeping distance on surface

10

mm

d

A

Creepage distance in air

9.4

mm

a

Max. allowable acceleration

50

Fig. 1 Gate trigger characteristics

Fig. 2

DC output current at case

temperature

Fig. 3 Surge overload current

I

Fig. 4 Transient thermal impedance

junction to case (per leg)

VTO 110

VTO 110

0

50

100

150

0

20

40

60

80

100

120

A

I

dAV

°C

T

C

VTO 110

1

10

100

1000

0.1

1

10

I

G

V

G

mA

1: I

V

4: P

I

4

2

1

5

6

3

M6x12

C~

D~

E ~

A+

B-

12

25

66

26

26

72

80

94

4

5

6

3

1

2

7

2.8 x 0.8

M6