Advanced Power

N-CHANNEL ENHANCEMENT MODE

Electronics Corp.

POWER MOSFET

▼ Simple Drive Requirement

30V

▼ Low On-resistance

18mΩ

▼ Fast Switching Characteristic

9.6A

▼ RoHS Compliant

Description

Absolute Maximum Ratings

Symbol

Units

V

V

A

A

A

W

W/℃

℃

℃

Symbol

Value

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient

3

50

℃

/W

Data and specifications subject to change without notice

200902049

1

AP4800AGM-HF

Rating

Halogen-Free Product

30

+25

9.6

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

3

-55 to 150

Continuous Drain Current

3

7.7

Pulsed Drain Current

1

40

0.02

Storage Temperature Range

2.5

-55 to 150

Thermal Data

Parameter

Total Power Dissipation

Operating Junction Temperature Range

Linear Derating Factor

Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The SO-8 package is widely preferred for commercial-industrial

surface mount applications and suited for low voltage applications

such as DC/DC converters.

S

S

S

G

D

D

D

D

SO-8

G

D

S