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LED2001PHR 数据表(PDF) 28 Page - STMicroelectronics |
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LED2001PHR 数据表(HTML) 28 Page - STMicroelectronics |
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28 / 42 page ![]() Application information LED2001 28/42 DocID024346 Rev 1 VIN=12 V, VFW_LED=3.5 V, nLED=2, ILED=700 mA The typical output voltage is: Equation 36 RDSON_HS has a typical value of 95 mΩ and RDSON_LS is 69 mΩ @ 25 °C. For the calculation we can estimate RDSON_HS = 140 mΩ and RDSON_LS= 100 mΩ as a consequence of Tj increase during the operation. TSW_EQ is approximately 12 ns. IQ has a typical value of 1.5 mA @ VIN = 12 V. The overall losses are: Equation 37 Equation 38 The junction temperature of the device is: Equation 39 where TA is the ambient temperature and RthJ-A is the thermal resistance junction-to- ambient. The junction-to-ambient (RthJ-A) thermal resistance of the device assembled in the HSO8 package and mounted on the board is about 40 °C/W. Assuming the ambient temperature is around 40 °C, the estimated junction temperature is: 7.4 Short-circuit protection In overcurrent protection mode, when the peak current reaches the current limit threshold, the device disables the power element and it is able to reduce the conduction time down to the minimum value (approximately 100 nsec typical) to keep the inductor current limited. This is the pulse-by-pulse current limitation to implement the constant current protection feature. In overcurrent condition, the duty cycle is strongly reduced and, in most applications, this is enough to limit the switch current to the current threshold. V OUT n LED V FW_LED V FB + ⋅ 7.1V == 2 P TOT R DSON_HS I OUT () ⋅ 2 DR DSON_LS I OUT () ⋅ 2 1D – () ⋅ V IN I OUT f SW T SW ⋅⋅ ⋅ V IN I Q ⋅ ++ + ⋅ = P TOT 0.14 0.7 2 0.6 0.1 0.7 2 0.4 ⋅⋅ 12 + 0.71210 9 – 850 10 3 12 1.5 10 3 – ⋅⋅ + ⋅⋅ ⋅ ⋅ ⋅ + ⋅⋅ 205mW ≅ = T J T A Rth JA – P TOT ⋅ + = T J 60 0.205 40 68 °C ≅ ⋅ + = |
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