This is information on a product in full production.

May 2012

Doc ID 15514 Rev 2

1/13

13

PD20010-E

RF power transistor, LdmoST plastic family

N-channel enhancement-mode lateral MOSFETs

Datasheet — production data

Features

directive

Description

The PD20010-E is a common source N-Channel,

enhancement-mode lateral field-effect RF power

transistor. It is designed for high gain, broadband

commercial and industrial applications. It

operates at 13.6 V in common source mode at

frequencies of up to 1 GHz. PD20010-E boasts

the excellent gain, linearity and reliability of ST’s

latest LDMOS technology mounted in the first true

SMD plastic RF power package, PowerSO-10RF.

PD20010-E’s superior linearity performance

makes it an ideal solution for car mobile radio.

The PowerSO-10 plastic package, designed to

offer high reliability, is the first ST JEDEC

approved, high power SMD package. It has been

specially optimized for RF needs and offers

excellent RF performances and ease of assembly.

Figure 1.

Pin connection

PowerSO-10RF

(formed lead)

PowerSO-10RF

(straight lead)

Gate

Source

Drain

Table 1.

Device summary

Order codes

Packages

Packing

PD20010-E

PowerSO-10RF (formed lead)

Tube

PD20010S-E

PowerSO-10RF (straight lead)

Tube

PD20010TR-E

PowerSO-10RF (formed lead)

Tape and reel

PD20010STR-E

PowerSO-10RF (straight lead)

Tape and reel

www.st.com