33SPA080 datasheet(2/4 Pages) SMC

2 / 4 page

SANGDEST

MICROELECTRONICS

Technical Data

Green Products

Data Sheet N1140, Rev. -

• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113

(86) 25-87123907

•

• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •

33SPA080/A

33SPA100/A

Maximum Ratings:

Characteristics

Symbol

Condition

Max.

Units

33SPA080/A

Peak Inverse Voltage

VRWM

100

33SPA100/A

Max.

Average

Forward

Current

IF(AV)

50% duty cycle, rectangular

wave form

Max. Peak One Cycle Non-

Repetitive Surge Current

IFSM

8.3 ms, half Sine pulse

570

Non-Repetitive

Avalanche

Energy

EAS

TJ=25℃,IAS=0.75A,L=40mH

11.25

Repetitive Avalanche Current

IAR

Current decaying linearly to

zero in 1 μsec Frequency

limited by TJ max. VA=1.5×

VR typical

0.75

Electrical Characteristics:

Characteristics

Symbol

Condition

Max.

Units

VF1

@ 30A, Pulse, TJ = 25 °C

0.84

Max. Forward Voltage Drop*

VF2

@ 30A, Pulse, TJ = 125 °C

0.68

IR1

@VR = rated VR, Pulse,

TJ = 25 °C

0.75

Max. Reverse Current*

IR2

@VR = rated VR, Pulse,

TJ = 125 °C

Max. Junction Capacitance

@VR = 5V, TC = 25 °C

fSIG = 1MHz,

VSIG=50mV(p-p)

1000

* Pulse Width < 300µs, Duty Cycle <2%

Thermal-Mechanical Specifications:

Characteristics

Symbol

Condition

Specification

Units

Max. Junction Temperature

-55 to +175

°C

Max. Storage Temperature

Tstg

-55 to +175

°C

Maximum Thermal

Resistance Junction to Case

RθJC

DC operation

0.50

°C/W

Case Style

SPD-1/A

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