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STB40N60M2 数据表(PDF) 7 Page - STMicroelectronics

部件名 STB40N60M2
功能描述  N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages
PDF  22 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STB40N60M2 数据表(HTML) 7 Page - STMicroelectronics

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DocID024932 Rev 3
7/21
STB40N60M2, STP40N60M2, STW40N60M2
Electrical characteristics
21
Figure 8. Gate charge vs gate-source voltage
Figure 9. Static drain-source on-resistance
Figure 10. Capacitance variations
Figure 11. Output capacitance stored energy
Figure 12. Normalized gate threshold voltage vs
temperature
Figure 13. Normalized on-resistance vs
temperature
VGS
6
4
2
0
0
20
Qg(nC)
(V)
60
8
30
40
10
VDD=480V
ID=34A
12
300
200
100
0
400
500
VDS
10
50
VDS
(V)
AM16102v1
RDS(on)
0.077
0.076
0.075
0
8
ID(A)
(
Ω)
4
12
0.078
VGS=10V
16
0.079
0.080
0.081
20
24
28
0.082
AM16103v1
C
1000
100
10
1
0.1
10
VDS(V)
(pF)
1
100
Ciss
Coss
Crss
10000
AM16104v1
Eoss
5
0
0
100
VDS(V)
(µJ)
400
200
300
500
600
10
15
AM16105v1
VGS(th)
0.9
0.8
0.7
0.6
TJ(°C)
(norm)
-50
1.0
ID=250µA
0
50
100
1.1
AM15718v1
RDS(on)
2.1
1.7
1.3
0.9
TJ(°C)
(norm)
0.5
-50
0
50
100
ID=17 A
AM15719v1



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