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STP40N60M2 数据表(PDF) 1 Page - STMicroelectronics |
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STP40N60M2 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 21 page ![]() This is information on a product in full production. May 2014 DocID024932 Rev 3 1/21 STB40N60M2, STP40N60M2, STW40N60M2 N-channel 600 V, 0.078 Ω typ., 34 A MDmesh II Plus™ low Q g Power MOSFETs in D 2 PAK, TO-220 and TO-247 packages Datasheet − production data Figure 1. Internal schematic diagram Features • Extremely low gate charge • Lower R DS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Applications • Switching applications • LLC converters, resonant converters Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Q g . These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters. AM01476v1 D2PAK TO-220 TO-247 1 3 2 TAB 1 2 3 TAB 1 2 3 Order codes VDS @ TJmax RDS(on) max ID STB40N60M2 650 V 0.088 Ω 34 A STP40N60M2 STW40N60M2 Table 1. Device summary Order codes Marking Package Packaging STB40N60M2 40N60M2 D 2 PAK Tape and reel STP40N60M2 TO-220 Tube STW40N60M2 TO-247 www.st.com |
类似零件编号 - STP40N60M2 |
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类似说明 - STP40N60M2 |
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