STF33N60M2 datasheet(3/20 Pages) STMICROELECTRONICS

3 / 20 page

DocID024298 Rev 2

3/19

STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

I2PAK, TO-220

TO-247

TO-220FP

VGS

Gate-source voltage

± 25

Drain current (continuous) at TC = 25 °C

26(1)

1. Limited by maximum junction temperature.

Drain current (continuous) at TC = 100 °C

16(1)

IDM

(2)

2. Pulse width limited by safe operating area.

Drain current (pulsed)

104

104(1)

PTOT

Total dissipation at TC = 25 °C

190

dv/dt (3)

3. ISD ≤ 26 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD= 400 V.

Peak diode recovery voltage slope

V/ns

dv/dt(4)

4. VDS ≤ 480 V

MOSFET dv/dt ruggedness

V/ns

VISO

Insulation withstand voltage (RMS) from

all three leads to external heat sink

(t = 1 s; TC = 25 °C)

2500

Tstg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

Table 3. Thermal data

Symbol

Parameter

Value

Unit

TO-220FP

I2PAK,

TO-220

TO-247

Rthj-case

Thermal resistance junction-case max

3.6

0.66

°C/W

Rthj-amb

Thermal resistance junction-ambient max

62.5

°C/W

Table 4. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not

repetitive (pulse width limited by Tjmax )

EAS

Single pulse avalanche energy (starting

Tj=25°C, ID= IAR; VDD=50)

2300

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