AT41511 datasheet(1/10 Pages) HP

部件名	AT41511

功能描述	General Purpose, Low Noise NPN Silicon Bipolar Transistor

PDF	10 Pages

Scroll/Zoom	100%

制造商	HP [Agilent(Hewlett-Packard)]

网页	http://www.home.agilent.com

标志

1 / 10 page

4-134

General Purpose, Low Noise

NPN Silicon Bipolar Transistor

Technical Data

Features

• General Purpose NPN

Bipolar Transistor

• 900 MHz Performance:

AT-41511: 1 dB NF, 15.5 dB GA

AT-41533: 1 dB NF, 14.5 dB GA

• Characterized for 3, 5, and

8 Volt Use

• SOT-23 and SOT-143 SMT

Plastic Packages

• Tape-and-Reel Packaging

Option Available[1]

Description

Hewlett-Packard’s AT-41511 and

AT-41533 are general purpose

NPN bipolar transistors that offer

excellent high frequency

performance at an economical

price. The AT-41533 uses the

3 lead SOT-23, while the AT-415 11

places the same die in the lower

parasitic 4 lead SOT-143. Both

packages are industry standard,

and compatible with high volume

surface mount assembly

techniques.

The 4 micron emitter-to-emitter

pitch of these transistors yields

high performance products that

can perform a multiplicity of

tasks. The 14 emitter finger

interdigitated geometry yields an

intermediate-sized transistor with

easy to match to impedances, low

noise figure, and moderate

power.

Optimized for best performace

from a 5 to 8 volt bias supply,

these transistors are also good

performers at 2.7 V. Applications

include use in wireless systems as

an LNA, gain stage, buffer,

oscillator, or active mixer.

An optimum noise match near

50 ohms at 900 MHz makes these

devices particularly easy to use as

LNAs. Typical amplifier designs

at 900 MHz yield 1 dB noise

figures with 15 dB or more

associated gain at a 5 V, 5 mA

bias, with good gain and noise

figure obtainable at biases as low

as 2 mA.

The AT-415 series bipolar

transistors are fabricated using

Hewlett-Packard’s 10 GHz fT Self-

Aligned-Transistor (SAT) process.

The die are nitride passivated for

surface protection. Excellent

device uniformity, performance

and reliability are produced by

the use of ion-implantation, self-

alignment techniques, and gold

metalization in the fabrication of

these devices.

AT-41511

AT-41533

1. Refer to “Tape-and-Reel Packaging for

Semiconductor Devices.”

BASE

EMITTER

EMITTER COLLECTOR

BASE

EMITTER

COLLECTOR

415

SOT 23 (AT-41533)

SOT 143 (AT-41511)

Outline Drawing

5965-8929E

类似零件编号 - AT41511

制造商	部件名	数据表	功能描述
Inchange Semiconductor ...	AT41511	268Kb / 3P	isc Silicon NPN Low Noise Bipolar Transistor

More results

类似说明 - AT41511

制造商	部件名	数据表	功能描述
AVAGO TECHNOLOGIES LIMI...	AT-41511	143Kb / 10P	General Purpose, Low Noise NPN Silicon Bipolar Transistors Lead-free
Infineon Technologies A...	BFP540FESD	538Kb / 6P	Low Noise Silicon Bipolar RF Transistor 2013-09-05
	BFP420	567Kb / 9P	Low Noise Silicon Bipolar RF Transistor 2013-09-19
	BFS481	563Kb / 6P	Low Noise Silicon Bipolar RF Transistor 2013-06-18
	BFR183	618Kb / 6P	Low Noise Silicon Bipolar RF Transistor 2014-04-03
AVAGO TECHNOLOGIES LIMI...	AT-41532	1Mb / 14P	General Purpose, Low Current NPN Silicon Bipolar Transistor
Inchange Semiconductor ...	AT41511	268Kb / 3P	isc Silicon NPN Low Noise Bipolar Transistor
Inchange Semiconductor ...	2SC5012	272Kb / 3P	isc Silicon NPN Low Noise Bipolar Transistor
AiT Semiconductor Inc.	BFG425W	664Kb / 6P	GENERAL PURPOSE TRANSISTOR RF NPN TRANSISTOR MICROWAVE LOW NOISE REV1.0
Inchange Semiconductor ...	2SC5095	256Kb / 3P	isc Silicon NPN Low Noise Bipolar Transistor