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MBR40200CT 数据表(PDF) 3 Page - Sangdest Microelectronic (Nanjing) Co., Ltd |
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MBR40200CT 数据表(HTML) 3 Page - Sangdest Microelectronic (Nanjing) Co., Ltd |
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3 / 6 page ![]() SANGDEST MICROELECTRONICS Technical Data Green Products Data Sheet N0775, Rev. - • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • MBR40200CT Marking Diagram: Where XXXXX is YYWWL MBR = Device Type 40 = Forward Current (40A) 200 = Reverse Voltage (200V) CT = Configuration SSG = SSG YY = Year WW = Week L = Lot Number Cautions:Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package Shipping MBR40200CT TO-220AB (Pb-Free) 50pcs / tube For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Symbol Condition Max. Units Peak Inverse Voltage VRWM - 200 V Max. Average Forward IF(AV) 50% duty cycle @TC =110°C, rectangular wave form 40 A Peak Repetitive Forward Current(per leg) IFRM Rated VR square wave, 20KHz TC =133°C 20 A Max. Peak One Cycle Non- Repetitive Surge Current (per leg) IFSM 8.3 ms, half Sine pulse 396 A |
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