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MBRB2545CT 数据表(PDF) 3 Page - Sangdest Microelectronic (Nanjing) Co., Ltd |
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MBRB2545CT 数据表(HTML) 3 Page - Sangdest Microelectronic (Nanjing) Co., Ltd |
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3 / 5 page ![]() SANGDEST MICROELECTRONICS Technical Data Green Products Data Sheet N0043, Rev. A • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • MBRB2545CT Electrical Characteristics: Characteristics Symbol Condition Max. Units VF1 @ 12.5 A, Pulse, TJ = 25 °C 0.70 V Max. Forward Voltage Drop(per leg)* VF2 @ 12.5 A, Pulse, TJ = 125 °C 0.60 V Max. Reverse Current (per leg) * IR1 @VR = rated VR TC = 25 °C 1.0 mA IR2 @VR = rated VR TC = 125 °C 40 mA Max. Junction Capacitance (per leg) CT @VR = 5V, TC = 25 °C fSIG = 1MHz 800 pF Max. Voltage Rate of Change dv/dt - 10,000 V/ μs * Pulse Width < 300µs, Duty Cycle <2% Thermal-Mechanical Specifications: Characteristics Symbol Condition Specification Units Max. Junction Temperature at reduced reverse voltage at reduced reverse voltage in DC forward mode TJ VR≤80%VRRM VR≤50%VRRM -55 to +150 -55 to +180 -55 to +200 °C Max. Storage Temperature Tstg - -55 to +150 °C Maximum Thermal Resistance Junction to Case (per leg) RθJC DC operation 4.5 °C/W Approximate Weight wt - 1.85 g Case Style D2PAK(TO-263AB) |
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