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MBRF3045CT 数据表(PDF) 5 Page - Sangdest Microelectronic (Nanjing) Co., Ltd |
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MBRF3045CT 数据表(HTML) 5 Page - Sangdest Microelectronic (Nanjing) Co., Ltd |
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5 / 7 page ![]() SANGDEST MICROELECTRONICS Technical Data Green Products Data Sheet N0831 Rev. A • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • MBRF3035CT MBRF3040CT MBRF3045CT Electrical Characteristics: Characteristics Symbol Condition Max. Units Max. Forward Voltage Drop* VF1 @ 15 A, Pulse, TJ = 25 °C @ 30 A, Pulse, TJ = 25 °C 0.70 0.84 V VF2 @ 15 A, Pulse, TJ = 125 °C @ 30 A, Pulse, TJ = 125 °C 0.57 0.72 V Max. Reverse Current (per leg) * IR1 @VR = rated VR TC = 25 °C 1.0 mA IR2 @VR = rated VR TC = 125 °C 100 mA Max. Junction Capacitance (per leg) CT @VR = 5V, TC = 25 °C fSIG = 1MHz 800 pF Typical Series Inductance (per leg) LS Measured lead to lead 5 mm from package body 7.5 nH Max. Voltage Rate of Change dv/dt - 10,000 V/ µs Pulse Width < 300µs, Duty Cycle <2% Thermal-Mechanical Specifications: Characteristics Symbol Condition Specification Units Max. Junction Temperature TJ - -55 to +150 °C Max. Storage Temperature Tstg - -55 to +150 °C Maximum Thermal Resistance Junction to Case (per leg) RθJC DC operation 2.4 °C/W Approximate Weight wt - 2 g Case Style ITO-220AB |
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